Semiconductor Doping Segmentation via Grain Boundary Control
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Solution Overview
Problem
Conventional semiconductor manufacturing processes face challenges in achieving precise doping distributions and concentrations, leading to increased costs and potential damage due to doping region diffusion and the need for multiple implantation processes.
Innovation Solution
A semiconductor device and manufacturing method involving a stacked structure with interlaced conductive and insulating layers, where different doping segments with distinct properties are formed in separate processes, creating a grain boundary interface to control doping concentrations and prevent diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If implantation processes are used to achieve deeper doping regions, then doping depth increases, but doping distribution enlarges and doping concentration per unit volume decreases
Solution Approach 1:
The conductive layer is divided into multiple doping segments (first doping segment and second doping segment) with different doping properties. Each segment can be doped independently to achieve precise control over doping distribution and concentration at different depths and locations, avoiding the diffusion problems associated with deep single-stage implantation.
Solution Approach 2:
Different segments of the conductive layer are doped with different doping properties (such as different dopant types or concentrations) to create locally optimized electrical characteristics. This allows precise control of doping concentration in specific regions without affecting other areas, resolving the trade-off between depth and concentration control.
2Manufacturing precision
If multiple implantation processes are applied to achieve predetermined doping concentrations in deeper regions, then doping concentration is improved, but manufacturing costs increase
Solution Approach 1:
By segmenting the conductive layer into multiple doped regions with distinct doping properties, the patent enables different doping concentrations to be achieved in different segments through a single or reduced number of implantation processes. This segmentation strategy reduces the need for multiple sequential implantation steps while maintaining precise doping concentration control.
3Length of moving object
If doping regions are allowed to diffuse, then doping depth increases, but boundaries of doping regions become less distinct
Solution Approach 1:
The conductive layer is divided into distinct doping segments before the doping process, with physical or chemical barriers established at segment interfaces. This preliminary segmentation prevents dopant diffusion across segment boundaries during subsequent thermal processing, maintaining sharp doping region boundaries while achieving the required doping depth through controlled implantation.
Data Source
AI summary
A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate and a stacked structure vertically formed on the substrate. The stacked structure includes a plurality of conductive layers and a plurality of insulating layers, and the conductive layers and the insulating layers are interlaced. At least one of the conductive layers has a first doping segment having a first doping property and a second doping segment having a second doping property, the second doping property being different from the first doping property. The interface between the first doping segment and the second doping segment has a grain boundary.