Semiconductor Doping Structure for High Voltage Trade-offs
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Solution Overview
Problem
Current semiconductor devices face challenges in optimizing the breakdown voltage and turn-on resistance, particularly in high voltage applications, where increasing breakdown voltage while minimizing turn-on resistance is crucial for efficient power management.
Innovation Solution
The semiconductor device incorporates a specific doping structure with a first conductive type well and second conductive type drift regions, including multiple doping regions with varying dopant concentrations, which allows for a reduced turn-on resistance and increased breakdown voltage by optimizing the doping profiles and well configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional doping structure is used, then the manufacturing process is simple, but the breakdown voltage cannot be sufficiently increased while maintaining low turn-on resistance
Solution Approach 1:
The drift region is divided into multiple doping regions (first drift doping region and second drift doping region) with different dopant concentrations. The first drift doping region has a lower concentration of first conductive type dopant, while the second drift doping region has a higher concentration, creating a segmented structure that optimizes both breakdown voltage and turn-on resistance
Solution Approach 2:
Different regions of the drift region are assigned different dopant concentrations to perform different functions. The first drift doping region with lower dopant concentration is positioned to enhance breakdown voltage, while the second drift doping region with higher dopant concentration is positioned to reduce turn-on resistance, achieving local optimization of electrical properties
2Ease of operation
If the first conductive type dopant concentration is increased in the drift region, then turn-on resistance decreases, but breakdown voltage is reduced
Solution Approach 1:
The drift region is segmented into multiple doping regions with different first conductive type dopant concentrations. The first drift doping region has a lower concentration to maintain high breakdown voltage, while the second drift doping region has a higher concentration to reduce turn-on resistance, allowing both parameters to be optimized simultaneously
Solution Approach 2:
The first conductive type dopant concentration is varied across different regions of the drift region. By changing the dopant concentration parameter from low in the first drift doping region to high in the second drift doping region, the patent achieves both low turn-on resistance and high breakdown voltage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively enhances the breakdown voltage while decreasing the turn-on resistance, improving the operational characteristics of the semiconductor device, particularly in high voltage applications like power management ICs.
Implementation Method 1
The first drift doping region may include a first conductive type dopant and a second conductive type dopant, and the second drift doping region may include the first conductive type dopant and the second conductive type dopant
Data Source
AI summary
A semiconductor device may include a semiconductor substrate, a first conductive type well and a second conductive type drift region in the semiconductor substrate, the drift region including a first drift doping region and a second drift doping region, the second drift doping region vertically overlapping the well, and a first conductive type body region in the well, the body region being in contact with a side of the first drift doping region. The first drift doping region and the second doping region may include a first conductive type dopant and a second conductive type dopant, and an average density of the first conductive type dopant in the first drift doping region may be less than an average density of the first conductive type dopant in the second drift doping region.