Semiconductor Doping Profile for Lower IGBT Turn-On Loss
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Solution Overview
Problem
Semiconductor devices, such as IGBTs, face challenges in reducing turn-on loss while maintaining a tradeoff between on-voltage and turn-off loss, primarily due to limitations in doping concentration distribution and trench structure design.
Innovation Solution
The semiconductor device incorporates a unique doping concentration distribution in the accumulation region with a full width at half maximum that is 2.2 times the standard, featuring a maximum portion, upper and lower gradient portions, and a kink or valley portion, along with trench structures that penetrate through emitter, base, and accumulation regions, optimizing carrier injection and reducing electric field concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the doping concentration distribution in the accumulation region is optimized with a full width at half maximum of 2.2 times the standard, then turn-on loss is reduced, but the device complexity increases due to the specific gradient portions and maximum portion requirements
Solution Approach 1:
The patent applies parameter changes by precisely controlling the doping concentration distribution in the accumulation region, specifying that the full width at half maximum should be 2.2 times the standard full width at half maximum. This parameter optimization reduces turn-on loss by modifying the electrical characteristics of the accumulation region without changing the fundamental device structure.
Solution Approach 2:
The patent implements local quality by creating specific regions within the accumulation zone with different doping concentration characteristics - an upper gradient portion, a maximum portion, and a lower gradient portion. Each sub-region has optimized local properties that collectively reduce turn-on loss while maintaining overall device functionality.
2Loss of energy
If the full width at half maximum of the doping concentration distribution is increased to 2.2 times the standard, then the tradeoff between on-voltage and turn-off loss is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The patent specifies precise parameter ranges for the doping concentration distribution, requiring the full width at half maximum to be 2.2 times the standard value. This parameter control enables optimization of the tradeoff between on-voltage and turn-off loss by creating an accumulation region with extended spatial distribution of dopants.
Solution Approach 2:
The patent employs partial action by focusing the doping concentration optimization specifically on the accumulation region rather than the entire device structure. By concentrating efforts on modifying only the accumulation region's doping profile with specific gradient portions and maximum portion, the patent achieves improved voltage-loss tradeoff without requiring comprehensive modification of all device components.
3Speed
If the doping concentration distribution includes upper and lower gradient portions with a maximum portion, then transient capacitance increase is suppressed, but the device structure becomes more complex
Solution Approach 1:
The patent applies local quality by dividing the accumulation region into distinct sub-regions with different doping concentration characteristics - an upper gradient portion, a maximum portion, and a lower gradient portion. Each sub-region contributes specifically to suppressing transient capacitance increase through its localized electrical properties, enabling fine-tuned control of device speed characteristics.
Solution Approach 2:
The patent implements dynamics by creating a doping concentration distribution that dynamically responds to operating conditions. The gradient portions and maximum portion configuration allows the accumulation region to adaptively modulate transient capacitance during switching operations, improving speed performance through dynamic electrical characteristic adjustment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces turn-on loss while improving the tradeoff between on-voltage and turn-off loss, suppressing the increase in transient capacitance and displacement current, thereby enhancing the overall performance of the semiconductor device.
Implementation Method 1
When a full width at half maximum determined by setting a depth position of the maximum portion as a range of impurity implantation with reference to a range-full width at half maximum characteristic according to a material of the semiconductor substrate and a type of impurities contained in the accumulation region
Data Source
AI summary
A doping concentration distribution in an accumulation region in a depth direction of a semiconductor substrate has a maximum portion at which a doping concentration reaches a maximum value, an upper gradient portion in which the concentration decreases from the maximum portion to a base region, a lower gradient portion in which the concentration decreases from the maximum portion to a drift region, and a kink portion at which a differential value of the doping concentration distribution exhibits an extreme value in a region except a region in which the differential value exhibits a maximum value or a minimum value.