Double-Layer Insulation for Semiconductor Surface Stability
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Solution Overview
Problem
Existing semiconductor devices for high power usage face challenges in achieving both stable chemical surface protection and favorable insulation characteristics, as the two requirements are difficult to combine effectively, leading to issues with current fluctuation and leak current, which affect device reliability and performance.
Innovation Solution
A semiconductor device with a double-layer insulation structure is proposed, where a stoichiometry silicon nitride film with balanced Si—H and N—H coupling densities serves as the first insulation layer, and a non-stoichiometry silicon nitride film with higher hydrogen content acts as the second layer, providing enhanced stabilizing action and insulation performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If an insulation film with high hydrogen content is used to stabilize the compound semiconductor surface, then the stabilizing action is improved, but the insulation characteristic deteriorates due to increased leak current
Solution Approach 1:
The patent divides the single insulation film into two separate layers: a first insulation film (SiN film) that provides stabilizing action through hydrogen content, and a second insulation film (SiO2 film) that provides superior insulation characteristics. This segmentation allows each layer to independently fulfill its specific function without compromising the other.
Solution Approach 2:
The patent applies different material properties to different regions (layers) of the insulation structure. The first layer uses a silicon nitride film with specific hydrogen content for surface stabilization, while the second layer uses silicon oxide for optimal insulation. Each layer has locally optimized properties tailored to its specific function.
2Reliability
If an insulation film with balanced Si-H and N-H coupling densities is used to achieve favorable insulation characteristics, then the leak current is reduced, but the stabilizing action for the compound semiconductor surface is insufficient
Solution Approach 1:
The patent segments the insulation function into two distinct layers: the first SiN film layer provides the stabilizing action through its hydrogen-containing bonds, while the second SiO2 film layer provides the superior insulation characteristics. This resolves the contradiction by assigning each function to the most suitable material layer.
Solution Approach 2:
The patent creates a composite insulation structure combining silicon nitride and silicon oxide films. This composite structure leverages the complementary strengths of both materials: SiN for surface stabilization and SiO2 for insulation, achieving both objectives simultaneously.
3Ease of manufacture
If a single-layer insulation film is used to simplify the device structure, then the manufacturing process is simplified, but it is essentially difficult to combine both stabilizing action and favorable insulation characteristics
Solution Approach 1:
The patent segments the insulation function into two specialized layers, each optimized for its specific role. This segmentation enables the achievement of both stabilizing action and favorable insulation characteristics, which cannot be accomplished with a single-layer film.
Solution Approach 2:
The patent employs a composite two-layer insulation structure combining silicon nitride and silicon oxide films. This composite approach allows the device to achieve superior overall performance by combining the complementary properties of both materials, despite the increased structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves device reliability by reducing gate leak current and stabilizing the compound semiconductor surface, thereby enhancing the overall performance and reducing device failure rates.
Implementation Method 1
the insulation film, which is excellent for the stabilizing action for the compound semiconductor surface, means the insulation film includes a lot of hydrogen (H)-terminated bond
Implementation Method 2
the stabilizing action for the compound semiconductor surface means such an action that, by forming the insulation film on the compound semiconductor surface, a chemical change phenomenon on the compound semiconductor surface is suppressed
Implementation Method 3
the favorable insulation characteristic of the insulation film itself means such a characteristic that the leak current flowed in the insulation film is small even when the high electric field is impressed
Data Source
AI summary
A semiconductor device including a compound semiconductor laminated structure having a plurality of compound semiconductor layers formed over a semiconductor substrate, a first insulation film covering at least a part of a surface of the compound semiconductor laminated structure, and a second insulation film formed on the first insulation film, wherein the second insulation film includes more hydrogen than the first insulation film.