Double Shielding Structure for Semiconductor EMI Loop Isolation

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Solution Overview

Problem

Conformal shielding layers in semiconductor packages do not effectively prevent EMI loop currents, leading to interference between sensitive components, and the process of forming selective and conformal shields is complex and costly.

Innovation Solution

A method of double shielding is implemented, where a selective shielding layer is formed over sensitive components and isolated from a conformal shielding layer by an insulating layer, reducing EMI loop currents through conductive pillars, and using jet printing to minimize complexity and cost.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If conformal shielding layers are formed over the entire semiconductor package, then EMI shielding coverage is improved, but EMI loop currents flow through the shielding layer causing interference

Engineering Contradiction:
ImproveEMI shielding coverageVSAvoidEMI loop currents
Core Design Contradiction:
Object-affected harmful factorsVSObject-generated harmful factors

Solution Approach 1:

The shielding structure is segmented into two distinct layers: a selective shielding layer formed only over sensitive components and a conformal shielding layer formed over the entire package. This segmentation prevents EMI loop currents from flowing through continuous conductive paths while maintaining comprehensive EMI coverage.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An insulating layer is introduced as an intermediary between the selective shielding layer and the conformal shielding layer. This insulating layer breaks the conductive path that would otherwise allow EMI loop currents to flow, while still allowing both shielding layers to function effectively.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Object-affected harmful factors

If both selective shield and conformal shield are formed, then EMI protection is enhanced, but manufacturing complexity and cost increase

Engineering Contradiction:
ImproveEMI protectionVSAvoidmanufacturing process complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The selective shielding layer is formed first over sensitive components before the conformal shielding layer is applied. This preliminary action allows the subsequent conformal layer to be deposited more easily without requiring complex masking or alignment processes, simplifying the overall manufacturing sequence.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The formation of both shielding layers is merged into a single manufacturing sequence where the selective shielding is deposited first, followed by the conformal shielding in the same processing run. This combining of operations reduces the total number of separate manufacturing steps and lowers overall complexity.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The double shielding method effectively reduces EMI interference by isolating sensitive components, enhancing electrical performance while simplifying and reducing the manufacturing process.

Implementation Method 1

The selective shielding layer is isolated from a conformal shielding layer by an insulating layer

Methodology Applied
Scientific EffectElectrical insulation: Dielectric

Implementation Method 2

reducing EMI loop currents through conductive pillars

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 3

Conductive layers are commonly formed over semiconductor packages to shield electronic parts within the package from EMI and other interference

Methodology Applied
Scientific EffectElectromagnetic shielding: Electromagnetic Induction

Data Source

PatentUS20250309137A1Semiconductor Device and Method of Double Shielding
Publication Date: 2025.10.02 STATS CHIPPAC LTD
  • US20250309137A1 patent drawing
  • US20250309137A1 patent drawing
  • US20250309137A1 patent drawing

AI summary

A semiconductor device has a substrate. A first electrical component and second electrical component are disposed over the substrate. A conductive pillar is formed over the substrate between the first electrical component and second electrical component. A first shielding layer is formed over the first electrical component and conductive pillar by jet printing conductive material. A second shielding layer is formed over the first electrical component and second electrical component by sputtering, spraying, or plating conductive material. An insulating layer is optionally formed between the first shielding layer and second shielding layer by jet printing insulating material over the first shielding layer.