Semiconductor Drift Region Layout for Breakdown Voltage and Low ON-Resistance
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Solution Overview
Problem
Semiconductor devices face challenges in simultaneously increasing breakdown voltage and reducing ON-resistance, as methods to enhance breakdown voltage often result in increased ON-resistance, and vice versa.
Innovation Solution
The semiconductor device incorporates a n−-type drift region with multiple first regions and a second region, where the n-type impurity concentration is higher in the first regions than in the second region, allowing for efficient depletion layer spreading and reduced ON-resistance while maintaining high breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the breakdown voltage is increased by conventional methods, then the breakdown voltage is improved, but the ON-resistance increases
Solution Approach 1:
The drift region is divided into multiple regions with different impurity concentrations: first regions with higher n-type impurity concentration and second regions with lower n-type impurity concentration. This local differentiation allows the first regions to provide low ON-resistance while the second regions contribute to high breakdown voltage, resolving the contradiction between these two parameters.
Solution Approach 2:
The drift region is segmented into multiple first regions and second regions with distinct impurity concentrations. The first regions (with higher impurity concentration) are positioned to reduce ON-resistance, while the second regions (with lower impurity concentration) are positioned to enhance breakdown voltage. This segmentation allows simultaneous optimization of both parameters.
2Reliability
If the ON-resistance is reduced by increasing impurity concentration, then the ON-resistance is improved, but the breakdown voltage decreases
Solution Approach 1:
Different regions of the drift region have different impurity concentrations tailored to their specific functions: first regions have higher impurity concentration to reduce ON-resistance, while second regions have lower impurity concentration to maintain high breakdown voltage. This local quality differentiation resolves the contradiction between ON-resistance and breakdown voltage.
Solution Approach 2:
The drift region is segmented into multiple first regions and second regions with distinct impurity concentrations. The first regions (with higher impurity concentration) are positioned to reduce ON-resistance, while the second regions (with lower impurity concentration) are positioned to enhance breakdown voltage. This segmentation allows simultaneous optimization of both parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables increased breakdown voltage and reduced ON-resistance without significant increases in either parameter, optimizing electrical performance.
Implementation Method 1
allowing for efficient depletion layer spreading and reduced ON-resistance while maintaining high breakdown voltage
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second electrode, a gate electrode, second semiconductor regions of a second conductivity type, third semiconductor regions of the first conductivity type, and a third electrode. The second electrode is provided in a plurality in second and third directions. Each second electrode opposes a portion of the first semiconductor region in the second and third directions with an insulating layer interposed. The gate electrode is provided around each second electrode. The first semiconductor region includes first regions provided respectively around the second electrodes and the second region provided around the first regions in the second and third directions. Impurity concentration of the first conductivity type in each of the first regions is higher than impurity concentration of the first conductivity type in the second region.