Semiconductor Integrated Circuit Driving Capability Control for High-Speed Current Detection
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Solution Overview
Problem
Existing semiconductor integrated circuit devices face challenges in achieving high-speed processing for motor driving control due to the requirement of loop time for A/D conversion of transformer output voltages, which limits the detection of normal and abnormal currents, especially in low-speed motor operations where dynamic ranges are small and high-speed processing is difficult.
Innovation Solution
A semiconductor integrated circuit device with a driving capability control circuit that controls the driving capability of a power semiconductor device based on normal current detection, eliminating the need for transformer-based current detection and enabling high-speed processing by using a current mirror circuit to differentiate between normal and abnormal currents without A/D conversion loop times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If transformer-based current detection is used, then current detection capability is provided, but processing speed is limited due to A/D conversion loop time
Solution Approach 1:
The patent extracts the current detection function from the transformer-based external detection system and integrates it directly into the semiconductor integrated circuit device. By incorporating a current detection circuit that directly senses current flow within the device, the system eliminates the transformer and A/D conversion loop, achieving high-speed processing while maintaining detection capability.
Solution Approach 2:
The patent introduces an intermediary current detection circuit as a mediator between the power semiconductor device and the control system. This circuit provides direct electrical sensing of current without requiring transformer coupling or analog-to-digital conversion, enabling high-speed current detection while reducing system complexity.
2Loss of time
If transformer-based detection is used, then current monitoring is achieved, but loop time prevents high-speed processing
Solution Approach 1:
The patent implements preliminary action by performing current detection directly at the source within the integrated circuit device, before the current would otherwise need to be transformed and converted. The current detection circuit is positioned to sense current flow immediately, eliminating subsequent processing delays and enabling real-time high-speed detection without compromising precision.
3Reliability
If traditional current detection is used, then normal current detection is possible, but abnormal current detection in low-speed operation is difficult
Solution Approach 1:
The patent applies local quality by implementing different detection capabilities for different current conditions within the same device. The current detection circuit is designed with specific characteristics that enable it to detect both normal operating currents and abnormal currents (such as leakage currents in low-speed operations) with high reliability, adapting to different operational states locally within the circuit.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for improved driving capability of power semiconductor devices, enabling high-torque motor operation with enhanced processing speed and sufficient gain for both normal and abnormal current detection, facilitating efficient motor control without the limitations of traditional transformer-based systems.
Implementation Method 1
using a current mirror circuit to differentiate between normal and abnormal currents without A/D conversion loop times
Data Source
AI summary
Adjustment of drive control based on a detection voltage of a transformer requires a loop time, and therefore high-speed processing of the adjustment is difficult. A semiconductor integrated circuit device includes a driving circuit that drives a power semiconductor device and a driving capability control circuit that controls a driving capability of the driving circuit. The driving circuit stops driving of the power semiconductor device based on an abnormal current detected from a sense current of the power semiconductor device. The driving capability control circuit controls the driving capability of the driving circuit based on a normal current detected from the sense current of the power semiconductor device.