Semiconductor Substrate Drying via Localized Thermal Resin Removal
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Solution Overview
Problem
Existing methods for cleaning and drying semiconductor substrates with high aspect ratio patterns face challenges such as pattern collapse or breakdown during drying, especially when using heat-decomposable resins, and require expensive supercritical cleaning devices.
Innovation Solution
A method involving cleaning with a solvent containing a resin (A) with an acetal structure, followed by heating to remove the solvent and blowing a gas above the resin's decomposition temperature to decompose and remove it from the surface, preventing pattern collapse and allowing efficient cleaning solution removal without a supercritical device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If heat-decomposable resin is applied to prevent pattern collapse during drying, then pattern stability is improved, but resin decomposition occurs at the bottom of the pattern causing collapse
Solution Approach 1:
The patent applies different temperatures to different locations: the substrate is maintained at a lower temperature (0°C or higher, below resin decomposition temperature) at the bottom, while hot gas is applied at the top surface. This local temperature differentiation prevents resin decomposition at the pattern bottom while enabling effective drying and resin removal at the top.
Solution Approach 2:
The drying process is segmented into two distinct stages: first, solvent removal by heating at temperatures below resin decomposition; second, resin decomposition and removal by blowing hot gas. This segmentation allows each stage to be optimized independently, preventing pattern collapse while achieving complete drying.
2Reliability
If supercritical cleaning method is used to prevent pattern breakdown, then pattern integrity is improved, but equipment cost increases significantly
Solution Approach 1:
The patent uses readily available heating equipment and gas sources instead of expensive supercritical cleaning devices. The method employs simple, inexpensive components (heating means, gas blowing means) to achieve the drying and cleaning function, eliminating the need for complex supercritical equipment.
Solution Approach 2:
The patent replaces the mechanical/physical supercritical fluid system with a thermal field-based approach. Instead of using supercritical fluids under high pressure, the method uses controlled heating and hot gas flow to achieve solvent removal and resin decomposition, substituting a complex mechanical system with a simpler thermal process.
3Productivity
If high temperature heating is applied to remove cleaning solution, then drying efficiency is improved, but resin decomposition occurs causing pattern collapse
Solution Approach 1:
Different temperature conditions are applied to different aspects of the process: low temperature (below resin decomposition point) for the substrate to prevent collapse, and high temperature (hot gas at decomposition temperature or higher) for the resin at the surface to enable decomposition and removal. This local temperature differentiation resolves the contradiction between drying efficiency and pattern stability.
Solution Approach 2:
The substrate is first heated at a low temperature to remove the solvent before the resin decomposition temperature is reached. This preliminary solvent removal prevents pattern collapse, and only after this safe stage is complete is the hot gas applied to decompose and remove the resin, ensuring pattern integrity is maintained throughout the process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses pattern collapse and resin decomposition at the substrate's bottom, enabling efficient cleaning solution removal for high aspect ratio patterns without the need for expensive supercritical cleaning devices.
Implementation Method 1
removing the solvent in the replaced composition by heating at a temperature lower than a decomposition temperature of the resin (A)
Implementation Method 2
blowing a gas having a temperature equal to or higher than the decomposition temperature of the resin (A) to the resin (A) on the semiconductor substrate... to decompose and remove the resin (A)
Implementation Method 3
maintaining a temperature of the semiconductor substrate onto which a pattern has been formed to 0° C. or higher and lower than the decomposition temperature of the resin (A)
Data Source
AI summary
A cleaning and drying method of a semiconductor substrate capable of suppressing collapse or breakdown of a pattern which occur at the time of drying a cleaning solution after cleaning the substrate and decomposition of a resin at a bottom of the pattern, and capable of removing the cleaning solution with good efficiency without using a specific device.