Semiconductor Substrate Drying Using Heat-Decomposable Resin
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Solution Overview
Problem
Current methods for cleaning and drying semiconductor substrates with high aspect ratios face issues such as pattern falling or collapse during the drying process, and require expensive apparatus for supercritical state cleaning solutions.
Innovation Solution
A method involving cleaning the substrate with a standard solution, followed by substitution with a heat-decomposable resin solution, removal of the solvent, and subsequent heat-induced decomposition and removal of the resin, which fills gaps between patterns to prevent collapse and efficiently removes the cleaning solution without specialized equipment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional drying methods (centrifugal force or isopropyl alcohol substitution) are used, then the cleaning solution can be removed, but pattern falling or collapse occurs on high aspect ratio substrates
Solution Approach 1:
A polymer compound is introduced as an intermediary substance to replace the cleaning solution. This polymer acts as a mediator that fills gaps between patterns and provides structural support during the drying process, preventing pattern collapse while allowing efficient removal of the cleaning solution.
Solution Approach 2:
The polymer compound is applied to the substrate before the final drying step. This preliminary action ensures that the polymer is in place to provide structural support and prevent pattern falling or collapse during the subsequent drying process.
2Productivity
If supercritical state cleaning solution apparatus is used, then cleaning solution removal is efficient, but the apparatus cost becomes expensive
Solution Approach 1:
The invention uses a simple, inexpensive polymer compound solution instead of expensive supercritical cleaning apparatus. The polymer solution is applied, allows cleaning solution removal, and then is itself removed by heat decomposition, providing a cost-effective alternative to complex equipment.
Solution Approach 2:
The invention replaces the mechanical/supercritical system with a chemical/thermal system. Instead of using complex supercritical fluid machinery, the process uses polymer chemistry and heat decomposition to achieve cleaning solution removal and drying.
3Ease of operation
If standard cleaning solution drying is performed, then the process is simple, but water mark or insufficient drying occurs
Solution Approach 1:
The invention changes the physical and chemical parameters of the drying process by introducing a polymer compound that alters the drying mechanism. The polymer provides structural support and enables complete drying without water marks while maintaining process simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively suppresses pattern falling or collapse on high aspect ratio substrates and efficiently removes the cleaning solution, achieving clean substrates without the need for expensive supercritical cleaning apparatus.
Implementation Method 1
a method involving cleaning the substrate with a standard solution, followed by substitution with a heat-decomposable resin solution
Implementation Method 2
subsequent heat-induced decomposition and removal of the resin
Implementation Method 3
which fills gaps between patterns to prevent collapse and efficiently removes the cleaning solution
Data Source
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AI summary
The present invention provides a method for cleaning and drying a semiconductor substrate in which a semiconductor substrate onto which a pattern has been formed is cleaned and dried, which comprises steps of (1) cleaning the semiconductor substrate onto which a pattern has been formed with a cleaning solution, (2) substituting the cleaning solution with a composition solution containing a resin (A) which is decomposed by either or both of an acid and heat, and (3) decomposing and removing the resin (A) by either or both of an acid and heat. There can be provided a method for cleaning and drying a semiconductor substrate in which pattern falling or collapse occurring at the time of drying the cleaning solution after cleaning the substrate can be suppressed, and the cleaning solution can be efficiently removed, without using a specific apparatus which handles a supercritical state cleaning solution.