Semiconductor Structure With Dual Gates And Super Junction
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Solution Overview
Problem
Existing semiconductor structures face a trade-off between increasing breakdown voltage and reducing on-state resistance, with methods like decreasing dopant concentration in the drain region leading to increased on-state resistance and larger design areas.
Innovation Solution
A semiconductor structure with a substrate, multiple doped regions, and dual gate structures is implemented, utilizing a super junction concept and dual-gate concept to enhance both breakdown voltage and on-state resistance by adjusting trench structures and dopant concentrations, allowing for high on-state current and low on-state resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the dopant concentration of the drain region is decreased to increase breakdown voltage, then the breakdown voltage is improved, but the on-state resistance is increased
Solution Approach 1:
The drain region is segmented into multiple doped regions with different dopant concentrations arranged in a specific pattern. This segmentation allows different portions of the drain to serve different functions: some regions provide high breakdown voltage while others maintain low on-state resistance, resolving the trade-off between these two parameters.
Solution Approach 2:
Different regions within the drain structure are assigned different dopant concentrations locally. By creating non-uniform doping distribution with alternating high and low concentration regions, the structure achieves high breakdown voltage in certain areas while maintaining low on-state resistance in current-conducting paths.
2Reliability
If the dopant concentration of the drain region is decreased to increase breakdown voltage, then the breakdown voltage is improved, but the design area is increased
Solution Approach 1:
The segmented doping structure achieves high breakdown voltage within a compact area by utilizing vertical and lateral arrangements of alternating doped regions. This segmentation allows efficient space utilization compared to conventional uniform doping structures that would require larger areas to achieve the same breakdown voltage.
Solution Approach 2:
The patent transitions from a conventional planar doping structure to a three-dimensional arrangement of alternating doped and undoped regions. By utilizing the vertical dimension and creating a layered structure, the design achieves high breakdown voltage without proportionally increasing the lateral design area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor structure achieves a high breakdown voltage of up to 1200V while maintaining low on-state resistance, effectively improving both performance metrics simultaneously.
Implementation Method 1
utilizing a super junction concept and dual-gate concept to enhance both breakdown voltage and on-state resistance
Implementation Method 2
As the semiconductor structure is in on-state, a current flows through a channel at least comprising a first channel and a second channel
Data Source
AI summary
A semiconductor structure and a method for operating the same are provided. The semiconductor structure includes a substrate, a first doped region, a second doped region, a third doped region, a first trench structure and a second gate structure. The first doped region is in the substrate. The first doped region has a first conductivity type. The second doped region is in the first doped region. The second doped region has a second conductivity type opposite to the first conductivity type. The third doped region having the first conductivity type is in the second doped region. The first trench structure has a first gate structure. The first gate structure and the second gate structure are respectively on different sides of the second doped region.