Semiconductor Device With Dual Gate And Thin Insulator
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Solution Overview
Problem
Existing semiconductor devices face challenges in suppressing transistor characteristic fluctuations while increasing the capacitance of storage capacitors, leading to potential defects and reduced mobility.
Innovation Solution
A semiconductor device configuration with a transistor and storage capacitor, where a second insulating layer with a thickness smaller than the first insulating layer is used between the upper and lower electrodes, and the second gate electrode is held at a fixed potential to suppress fluctuations and increase capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional transistor structure with a single gate electrode is used, then the device complexity is low, but the transistor characteristic fluctuation cannot be suppressed
Solution Approach 1:
The gate electrode is divided into two separate gate electrodes (first gate electrode and second gate electrode) that face each other across the semiconductor film. This segmentation allows independent control and optimization of electrical characteristics, enabling suppression of transistor characteristic fluctuations while maintaining manageable device complexity through modular architecture.
2Reliability
If the insulating layer thickness is increased to suppress defects, then the manufacturing precision improves, but the storage capacitor capacitance decreases
Solution Approach 1:
Different insulating layers are assigned different thicknesses based on their specific functional requirements. The first insulating layer (between gate electrode and semiconductor film) has a greater thickness optimized for defect suppression and electrical stability, while the second insulating layer (in the storage capacitor) has a smaller thickness optimized for maximizing capacitance. This local optimization resolves the contradiction between reliability and capacitance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses transistor characteristic fluctuations and increases storage capacitor capacitance, reducing the risk of defects and enhancing device yield, while maintaining transistor mobility and reducing manufacturing costs.
Implementation Method 1
a second insulating layer provided between the lower electrode and the upper electrode and having a thickness smaller than a thickness of the first insulating layer
Implementation Method 2
a first insulating layer provided between the second gate electrode and the semiconductor film
Data Source
AI summary
A semiconductor device includes a substrate, a transistor, a storage capacitor, a first insulating layer, and a second insulating layer. The transistor includes a semiconductor film, a gate insulating film, a first gate electrode, and a second gate electrode. The semiconductor film, the gate insulating film, and the first gate electrode are provided in this order from the substrate. The second gate electrode faces the first gate electrode across the semiconductor film. The storage capacitor includes a lower electrode and an upper electrode that are provided in this order from the substrate. The upper electrode faces the lower electrode and includes the same material as the semiconductor film. The first insulating layer is provided between the second gate electrode and the semiconductor film. The second insulating layer is provided between the lower electrode and the upper electrode and has a smaller thickness than the first insulating layer.