Dual-Layer Insulation for Semiconductor Heat Dissipation

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Solution Overview

Problem

Semiconductor devices face a trade-off between heat-dissipation performance and insulation performance, with increasing heat generation and high-frequency operations requiring efficient heat dissipation without compromising insulation reliability, especially with the use of inorganic fillers that enhance thermal conductivity but deteriorate insulation characteristics.

Innovation Solution

A semiconductor device design featuring two distinct insulation layers: a high-heat-dissipation insulation layer and a high-insulation insulation layer, where the high-heat-dissipation layer is optimized for thermal conductivity and the high-insulation layer for electrical insulation, allowing for enhanced heat dissipation and insulation performance without the drawbacks of single-layer solutions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If inorganic powder with high thermal conductivity is added to enhance heat-dissipation performance, then thermal conductivity is improved, but insulation performance deteriorates due to electric field concentration by the inorganic filler

Engineering Contradiction:
Improveheat-dissipation performanceVSAvoidinsulation performance
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The insulation sheet is divided into multiple layers with different functions: a first insulation layer containing inorganic powder with high thermal conductivity for heat dissipation, and a second insulation layer with high insulation performance for electrical isolation. This segmentation allows each layer to optimize for its specific function without compromising the other.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the insulation sheet have different material compositions tailored to local requirements: the first insulation layer uses inorganic powder-filled resin for thermal conduction where heat dissipation is critical, while the second insulation layer uses material optimized for electrical insulation where voltage withstanding is paramount.

Inventive Principle:
Principle #3Local quality

2Temperature

If particle size of inorganic powder is increased to increase filling amount and enhance heat-dissipation performance, then thermal conductivity is improved, but insulation performance deteriorates due to electric field concentration

Engineering Contradiction:
Improveheat-dissipation performanceVSAvoidinsulation performance
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The insulation sheet is divided into multiple layers with different functions: a first insulation layer containing inorganic powder with high thermal conductivity for heat dissipation, and a second insulation layer with high insulation performance for electrical isolation. This segmentation allows each layer to optimize for its specific function without compromising the other.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the insulation sheet have different material compositions tailored to local requirements: the first insulation layer uses inorganic powder-filled resin for thermal conduction where heat dissipation is critical, while the second insulation layer uses material optimized for electrical insulation where voltage withstanding is paramount.

Inventive Principle:
Principle #3Local quality

3Reliability

If ceramic substrate is thickened to achieve high withstand voltage, then insulation performance is improved, but heat-dissipation performance deteriorates due to increased thermal resistance

Engineering Contradiction:
Improveinsulation performanceVSAvoidheat-dissipation performance
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The insulation structure is segmented into two functional layers: the first insulation layer optimized for thermal conduction with inorganic powder filler, and the second insulation layer optimized for electrical isolation. This allows the heat dissipation path to be optimized separately from the insulation thickness required for voltage withstanding.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insulation sheet uses composite materials: the first insulation layer combines resin with inorganic powder filler to achieve both thermal conduction and basic insulation, while the second insulation layer uses material specifically optimized for high voltage isolation, creating a composite structure that achieves both thermal and electrical performance.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This dual-layer approach optimizes both heat-dissipation and insulation performance, providing improved thermal conductivity and insulation reliability while preventing electric field concentration and void generation, thus enabling stable operation of high-temperature semiconductor elements.

Implementation Method 1

Heat generated by the semiconductor elements is transmitted to the metal base plate via the ceramic substrate, and then dissipated outside through a cooling unit connected to the metal base plate

Methodology Applied
Scientific EffectHeat conduction: Conduction (thermal)

Implementation Method 2

the semiconductor device needs to be manufactured in which heat generated by the semiconductor elements can be efficiently dissipated to the metal base plate, without deteriorating the insulation reliability of the organic insulation sheet and ceramic substrate

Methodology Applied
Scientific EffectElectrical insulation: Dielectric

Data Source

PatentUS9287201B2Semiconductor device
Publication Date: 2016.03.15 MITSUBISHI ELECTRIC CORP
  • US9287201B2 patent drawing
  • US9287201B2 patent drawing
  • US9287201B2 patent drawing

AI summary

A semiconductor device including: a semiconductor element; a lead frame connected to the semiconductor element; a metal base plate mounted on the lead frame via a first insulation layer; and a second insulation layer disposed on the opposite side of the metal base plate face on which the first insulation layer is disposed; wherein the first insulation layer is an insulation layer whose heat-dissipation performance is higher than that of the second insulation layer, and the second insulation layer is an insulation layer whose insulation performance is the same as that of the first insulation layer or higher than that of the first insulation layer.