Semiconductor Component Dual-Layer Trace Routing

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Solution Overview

Problem

Conventional semiconductor components require multiple high-resistance conductor layers for wiring, leading to poor electrical characteristics due to wider traces and increased parasitic capacitors.

Innovation Solution

A semiconductor component design that uses only two conductor layers to implement crossings of multiple traces, eliminating the need for high-resistance layers by strategically arranging continuous segments across layers via through structures like vias, allowing traces to cross each other while maintaining low resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple high-resistance conductor layers are used for wiring, then trace crossings can be implemented, but resistance and parasitic capacitance increase leading to poor electrical characteristics

Engineering Contradiction:
Improvetrace crossing capabilityVSAvoidelectrical characteristics
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent transitions from using multiple conductor layers (vertical dimension) to using a single planar conductor layer with spiral/meander patterns (horizontal dimension). Traces that would traditionally cross in different layers are instead routed through continuous spiral patterns within the same layer, eliminating the need for high-resistance upper layers while maintaining crossing functionality.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent divides continuous traces into multiple spiral or meander segments within a single conductor layer. Each spiral segment serves as a continuous trace path, allowing multiple traces to coexist and cross in the planar domain without requiring additional conductor layers, thus reducing overall resistance and parasitic capacitance.

Inventive Principle:
Principle #1Segmentation

2Power

If wider traces are used to withstand high currents in high-resistance layers, then current carrying capacity improves, but parasitic capacitance increases resulting in poor electrical characteristics

Engineering Contradiction:
Improvecurrent carrying capacityVSAvoidelectrical characteristics
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The patent moves trace routing from the vertical dimension (multiple layers) to the horizontal dimension (spiral patterns in single layer). This allows traces to maintain optimal width for current carrying while reducing parasitic capacitance by eliminating overlapping structures between layers, thereby improving electrical characteristics without sacrificing power handling.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Adaptability or versatility

If multiple conductor layers are used to implement crossed traces, then wiring flexibility improves, but device complexity increases

Engineering Contradiction:
Improvewiring flexibilityVSAvoidnumber of conductor layers
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent resolves the contradiction by utilizing planar spiral patterns within a single conductor layer to achieve what would traditionally require multiple layers. The spiral geometry provides the necessary routing flexibility and trace crossings without increasing vertical complexity, thereby simplifying the device structure while maintaining wiring adaptability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11450599B2Semiconductor component
Publication Date: 2022.09.20 REALTEK SEMICON CORP
  • US11450599B2 patent drawing
  • US11450599B2 patent drawing
  • US11450599B2 patent drawing

AI summary

An integrated circuit is provided. The integrated circuit includes a first trace, a second trace and a third trace. The first trace, the second trace and the third trace are each a continuous trace. The first trace, the second trace and the third trace together use only two conductor layers of a semiconductor structure. In a crossing area of the first trace, the second trace and the third trace, the first trace crosses the second trace once, the first trace crosses the third trace once, and the second trace crosses the third trace once.