Semiconductor Component With Dual Metal Layer Mechanical Support
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Solution Overview
Problem
Existing semiconductor components lack sufficient mechanical stability, particularly in regions without substrate support, leading to potential damage during processing and usage.
Innovation Solution
A semiconductor component design featuring a semiconductor body with a p-n transition active layer, where a first metal layer provides complete lateral coverage and mechanical stabilization, and a second metal layer offers additional support, ensuring no region is without mechanical support, enhancing manufacturing output and robustness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a semiconductor component is designed without complete lateral coverage by metal layers, then the manufacturing process is simpler and device complexity is reduced, but the mechanical stability and robustness of the component deteriorates
Solution Approach 1:
The patent combines multiple metal layers (first metal layer providing complete lateral coverage, second metal layer providing additional support) with the semiconductor body to form an integrated structure. This merging of components creates a mechanically stable component while maintaining a streamlined design without requiring separate reinforcement elements.
Solution Approach 2:
The metal layers serve multiple functions simultaneously: they provide mechanical support and stabilization, enable electrical bonding through through-connections, and facilitate radiation decoupling. This multi-functionality reduces the need for additional specialized components, thereby reducing overall device complexity while improving mechanical stability.
2Strength
If complete lateral coverage with metal layers is implemented, then mechanical stability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent incorporates through-connections extending through the semiconductor body before final metal layer deposition. This preliminary action of creating through-connections allows subsequent metal layers to be applied with standard precision, as the through-connections already provide alignment references and structural guidance, reducing the precision burden on later manufacturing steps.
3Adaptability or versatility
If the semiconductor body is devoid of growth substrate, then the component design flexibility is improved and device complexity is reduced, but the mechanical stability deteriorates
Solution Approach 1:
The patent segments the mechanical support function from the growth substrate by implementing a dedicated metal layer structure that provides lateral coverage and support. This segmentation allows the growth substrate to be completely removed for design flexibility while the metal layers independently provide the necessary mechanical stability.
Solution Approach 2:
The patent applies metal layers with specific local properties: the first metal layer provides complete lateral coverage for overall structural stability, while the second metal layer provides additional localized support in specific regions. This local quality approach ensures mechanical stability is maintained precisely where needed after growth substrate removal.
Data Source
AI summary
A component with a semiconductor body, and first and second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer, the semiconductor body has a first semiconductor layer on a side which is averted from the first metal layer, a second semiconductor layer on a side facing towards the first metal layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer, the component has a through-connection, which extends through the second semiconductor layer and the active layer for the electrical bonding of the first semiconductor layer. The second metal layer has a first subregion electrically connected to the through-connection by the first metal layer, and a second subregion spaced apart laterally from the first subregion by an intermediate space. In an overhead view, the first metal layer laterally completely covers the intermediate space.