Semiconductor Device Dual-Mode Nonvolatile Storage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in reducing storage area size and achieving higher integration density while maintaining efficient data access and erasure capabilities, particularly in NOR flash memory systems that require distinct operation modes.
Innovation Solution
A semiconductor device with multiple nonvolatile storage areas and a control portion that selects between two operation modes, allowing the unused sectors or blocks to be used for control information storage, thereby optimizing storage area utilization and eliminating the need for high-voltage drive circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a boot area is added to NOR flash memory for storing data read before main storage area access, then data access efficiency is improved, but storage area size increases
Solution Approach 1:
The second nonvolatile storage area is designed to serve multiple functions: it acts as a boot area when boot mode is selected, and as an extension of the main storage area when uniform mode is selected. This multi-functionality allows the same physical storage region to support different operational modes without requiring separate dedicated boot storage, thereby improving data access efficiency while avoiding additional storage area expansion.
Solution Approach 2:
The patent implements dynamic mode selection between boot mode and uniform mode, allowing the storage areas to be reconfigured based on operational requirements. The control portion dynamically switches between using the second storage area as a boot area or as part of the main storage area, enabling the system to adapt its storage configuration to different access patterns and requirements without permanent structural changes.
2Reliability
If control information is stored in a dedicated area within the first nonvolatile storage area, then data protection is improved, but storage area size increases
Solution Approach 1:
The third nonvolatile storage area within the first nonvolatile storage area serves dual purposes: it stores control information for protecting data in the first storage area during boot mode, and stores control information for the second storage area during uniform mode. This multi-functional design allows a single storage region to provide protection for different storage areas under different operational modes, improving data protection capabilities without requiring separate control information storage areas for each mode.
3Adaptability or versatility
If high-voltage drive circuits are added to enable data erasure in NOR flash memory, then erasure capability is improved, but device complexity increases
Solution Approach 1:
The control portion is designed to handle multiple operations including data erasure, reading, and writing across different storage areas and operational modes. By consolidating these functions in a single control unit that dynamically configures storage area usage based on the selected mode, the patent achieves comprehensive erasure capability without requiring separate high-voltage drive circuits for different operational scenarios, thereby reducing overall device complexity.
4Adaptability or versatility
If multiple storage areas are implemented for different operation modes, then adaptability is improved, but manufacturing cost increases
Solution Approach 1:
The storage system is segmented into distinct nonvolatile storage areas (first and second storage areas with their respective control information areas) that can be independently configured. This segmentation allows the manufacturer to produce memory devices with flexible storage area allocations that can be adapted to different application requirements, enabling operation mode flexibility while maintaining manufacturing efficiency through standardized modular storage area designs.
Data Source
AI summary
A semiconductor device includes a first nonvolatile storage area including a plurality of sectors, a second nonvolatile storage area, a third nonvolatile storage area located in the first nonvolatile storage area, a fourth nonvolatile storage area located in the second nonvolatile storage area, and a control portion selecting one of a first mode and a second mode. In first mode, sectors where the third nonvolatile storage area is not located in the first nonvolatile storage area are used as a main storage area, and the second nonvolatile storage area is used to store a program or data that is read before the first nonvolatile storage area is accessed, the third nonvolatile storage area being used to store control information that controls writing, reading, and erasing of data involved in the first nonvolatile storage area or the second nonvolatile storage area. In the second mode, the first nonvolatile storage area is used as the main storage area, and the fourth nonvolatile storage area is used to store the control information.


