Semiconductor Device Dual-Sided Heat Dissipation

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Solution Overview

Problem

Conventional semiconductor devices face inadequate heat dissipation, which reduces device reliability and prevents miniaturization and thickness reduction.

Innovation Solution

A semiconductor device design featuring insulating substrates with metal foils on both surfaces, allowing for efficient heat dissipation from both upper and lower main surfaces via heat-dissipating fins, and a sealing resin that exposes specific metal foil surfaces for enhanced bonding and insulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If heat dissipation ability is increased by conventional methods, then heat dissipation improves, but device thickness increases and miniaturization is prevented

Engineering Contradiction:

Improveheat dissipation abilityVSAvoiddevice thickness

Core Design Contradiction:

TemperatureVSLength of moving object

Solution Approach 1:

The patent transitions from single-sided heat dissipation to dual-sided heat dissipation by providing metal foils on both the upper and lower surfaces of the insulating substrate. This dimensional change allows heat to be dissipated in multiple directions simultaneously, improving heat dissipation ability without increasing device thickness.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent segments the heat dissipation function by providing separate metal foils on both surfaces of the insulating substrate, allowing independent heat dissipation paths from upper and lower surfaces of the semiconductor element. This segmentation enables efficient heat management while maintaining compact device dimensions.

Inventive Principle:

Principle #1Segmentation

2Reliability

If metal foils extend to the ends of the insulating plate, then electrical connection is improved, but insulation reliability deteriorates due to exposed metal edges

Engineering Contradiction:

Improveelectrical connection reliabilityVSAvoidinsulation failure risk from exposed metal

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies local quality by making the metal foil extend beyond the insulating substrate only in specific regions where electrical connection is needed, while maintaining proper insulation in other areas. This selective extension optimizes both electrical connection and insulation reliability.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The sealing resin acts as an intermediary that covers and protects the exposed metal foil edges, preventing insulation failure while maintaining electrical connection functionality. This mediator resolves the conflict between electrical connection needs and insulation requirements.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Object-affected harmful factors

If sealing resin covers all metal foil surfaces, then insulation is improved, but heat dissipation efficiency decreases

Engineering Contradiction:

Improveinsulation performanceVSAvoidheat dissipation efficiency

Core Design Contradiction:

Object-affected harmful factorsVSTemperature

Solution Approach 1:

The sealing resin selectively covers only the necessary portions of the metal foil that require insulation protection, while leaving exposed the surfaces that need to be bonded to heat-dissipating fins. This local differentiation optimizes both insulation performance and heat dissipation efficiency.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design achieves reliable heat dissipation and electrical connection, increasing the reliability of semiconductor devices while enabling miniaturization and reduced thickness.

Implementation Method 1

a sealing resin that seals the semiconductor element, wherein the sealing resin covers side surfaces and end surfaces of the first insulating plate on the outer side from the first metal foil and the second metal foil

Methodology Applied

Scientific EffectElectrical insulation: Dielectric

Implementation Method 2

Heat generated from the IGBT element 110Na and the diode 110Nb is easily conducted to a heat-dissipating fin 170N

Methodology Applied

Scientific EffectHeat conduction: Conduction (thermal)

Data Source

PatentUS8673691B2Method for manufacturing a semiconductor device

Publication Date: 2014.03.18 FUJI ELECTRIC CO LTD

AI summary

A method for manufacturing a semiconductor device has a step of forming a first substrate; a step of facing a first main electrode to the first metal foil, and electrically connecting the first main electrode and the first metal foil; a step of facing a second main electrode to the second metal foil, and electrically connecting the second main electrode and the second metal foil; a step of forming a second substrate; and steps of facing a surface side of the second substrate to a surface side of the first substrate; electrically connecting the third metal foil and a third main electrode provided on a main surface of the first semiconductor element; and electrically connecting the fourth metal foil and a fourth main electrode provided on a main surface of the second semiconductor element.