Semiconductor Device With Dual Supporter Patterns For Electrode Stability
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Solution Overview
Problem
As semiconductor devices integrate more densely, the increased aspect ratio of cylindrical lower electrodes leads to instability, causing them to collapse or break before dielectric deposition, necessitating a solution to support these electrodes effectively.
Innovation Solution
The semiconductor device employs a dual supporter pattern system where the first supporter pattern exposes and covers specific sidewall portions of the structures, while the second supporter pattern, made of a different material, provides additional support with a larger exposed and covered region, ensuring stability and effective support for the lower electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the aspect ratio of cylindrical lower electrodes is increased to maintain or increase capacitance while reducing device area, then the integration density is improved, but the lower electrodes collapse or break before dielectric deposition
Solution Approach 1:
The patent introduces a supporter pattern as an intermediary structure between the substrate and the lower electrode. This supporter pattern provides mechanical support to the lower electrode, preventing collapse during dielectric deposition while allowing the electrode to maintain its high aspect ratio for increased capacitance and integration density.
Solution Approach 2:
The supporter pattern is divided into multiple regions (first region, second region, third region, fourth region) with different configurations. The first and third regions expose sidewalls for support, while the second and fourth regions cover portions for protection, creating a segmented structure that optimizes both support and stability.
2Reliability
If the size of open region of top supporter pattern is increased to provide better support, then the electrode stability is improved, but the device area increases
Solution Approach 1:
The supporter pattern applies local quality by having different regions with different functions: some regions (first and third) expose sidewalls to provide support, while other regions (second and fourth) cover portions for protection. This localized differentiation allows optimal support with minimal area occupation.
Solution Approach 2:
The supporter pattern utilizes vertical dimensionality by creating a multi-layered structure with mid and top supporter patterns at different heights. This three-dimensional configuration provides enhanced support without significantly increasing the planar footprint of the device.
Data Source
AI summary
A semiconductor device and method of manufacturing are provided. The semiconductor device includes a substrate; first and second structures spaced apart from each other on the substrate in a first direction, the first structure including a first lower electrode and the second structure including a second lower electrode; a first supporter pattern disposed on the substrate to support the first and second structures, and including a first region that exposes portions of sidewalls of the first and second structures, and a second region that covers a second portion of the sidewalls; and a second supporter pattern disposed on the first supporter pattern to support the first and second structures, the second supporter pattern including a third region, the third region configured to expose portions of the first sidewall and the second sidewall, and a fourth region that covers a portion of the first and second sidewalls.