3D Semiconductor Memory Dummy Channel Layers
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Solution Overview
Problem
The integration and operational reliability of three-dimensional non-volatile memory devices are limited by the complexity of their stacked structures, particularly in maintaining effective insulation and coupling between conductive layers, which affects the manufacturing process and device performance.
Innovation Solution
A semiconductor device with a stack structure that includes channel holes, dummy channel holes, and a slit insulating layer, where the slit passes through the stack and dummy channel holes to couple the dummy channel holes, forming channel and dummy channel layers that enhance insulation and structural stability, thereby improving the manufacturing process and device reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dummy channel holes are formed between channel holes in the stack, then insulation between conductive layers is improved, but device structure becomes more complex
Solution Approach 1:
The stack structure is segmented by introducing dummy channel holes between the channel holes, dividing the continuous conductive layer into isolated segments. This segmentation provides effective insulation between adjacent conductive layers while maintaining the overall stacked architecture. The dummy channel holes act as insulating barriers that prevent electrical interference between neighboring memory strings.
Solution Approach 2:
The dummy channel holes serve as intermediary insulating structures positioned between the functional channel holes. These intermediary elements mediate the electrical isolation between adjacent conductive layers without disrupting the overall device functionality. The slit insulating layer further acts as an intermediary that couples the dummy channel holes while maintaining insulation.
2Stability of the object's composition
If a slit insulating layer is formed to couple dummy channel holes, then structural stability is improved, but manufacturing process becomes more complex
Solution Approach 1:
The manufacturing process merges multiple functions into the slit insulating layer formation step. The slit insulating layer simultaneously couples the dummy channel holes together, provides structural stability to the stack, and maintains insulation between conductive layers. This merging of functions reduces the number of separate manufacturing steps required.
Solution Approach 2:
The slit insulating layer performs multiple functions within a single structural element: it couples the dummy channel holes laterally, provides mechanical support and structural stability to the high-aspect-ratio stack, and maintains electrical insulation. This multi-functionality simplifies the overall manufacturing process despite the increased structural complexity.
3Reliability
If channel layers and dummy channel layers are formed to different depths, then coupling between memory blocks is improved, but manufacturing precision requirements increase
Solution Approach 1:
The channel layers and dummy channel layers are formed with different local qualities in terms of depth. The channel layers extend to a first depth optimized for memory block coupling, while the dummy channel layers extend to a second depth optimized for insulation and structural support. This local differentiation of depth qualities allows each layer type to perform its specific function effectively while maintaining overall device reliability.
Data Source
AI summary
Provided herein may be a semiconductor device. The semiconductor device may include a stack, channel holes passing through the stack, dummy channel holes passing through the stack and disposed between the channel holes, a slit passing through the stack and the dummy channel holes.