Semiconductor Dummy Dam Absorbs Mechanical Stress

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Solution Overview

Problem

Semiconductor devices are prone to failure due to external mechanical stress and impact during fabrication, leading to cracks and potential breakdown.

Innovation Solution

Incorporating a first dummy dam and a metal layer with trenches in the semiconductor device structure to absorb and dissipate energy from external impacts, thereby protecting data storage elements from stress and impact.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If semiconductor devices are integrated with higher density, then functionality and miniaturization are improved, but susceptibility to mechanical stress and impact increases

Engineering Contradiction:

Improveintegration densityVSAvoidmechanical stress susceptibility

Core Design Contradiction:

Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

A dummy dam structure is introduced as an intermediary element between the data storage elements and external stress sources. This dummy dam absorbs and redistributes mechanical stress, preventing it from reaching the sensitive data storage elements during fabrication processes such as scribing and dicing.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The dummy dam is positioned in advance around the data storage elements to provide protective cushioning against upcoming mechanical stresses during fabrication. This pre-positioned structure absorbs impact energy before it can reach the vulnerable integrated circuit components.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

2Reliability

If dummy dam structures are added to protect data storage elements, then reliability under mechanical stress is improved, but device complexity increases

Engineering Contradiction:

Improveresistance to mechanical stressVSAvoidstructural complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The dummy dam structure is localized specifically around the data storage elements in the pad region, rather than throughout the entire device. This targeted approach provides protection where it is most needed while minimizing the overall structural complexity and material usage.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The dummy dam is designed as a simple, sacrificial structure that can be easily fabricated and removed or left as a non-interfering remnant. Its construction uses standard materials and processes, and it serves its protective function without requiring complex integration into the final device architecture.

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

3Ease of operation

If contact plugs are positioned in peripheral regions, then electrical connectivity is improved, but vulnerability to edge stress increases

Engineering Contradiction:

Improveelectrical connectivityVSAvoidedge stress exposure

Core Design Contradiction:

Ease of operationVSObject-affected harmful factors

Solution Approach 1:

The dummy dam acts as a mediator between the contact plugs in the peripheral region and the external mechanical stresses. It absorbs and redistributes stress away from the contact plug regions, protecting these electrically critical but mechanically vulnerable components.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The semiconductor device is made more resilient to mechanical stress and impact, reducing the likelihood of cracks and failure by using the dummy dams and metal layer to absorb and redirect stress, thus enhancing its durability.

Implementation Method 1

The first dummy dam may be at least partly in the first insulation layer and disposed substantially around the data storage elements so as to form a perimeter around the data storage elements to absorb energy from external impacts

Methodology Applied

Scientific EffectEnergy absorption: Damping

Implementation Method 2

The metal layer may include at least one trench... The semiconductor device is made more resilient to mechanical stress and impact, reducing the likelihood of cracks and failure by using the dummy dams and metal layer to absorb and redirect stress

Methodology Applied

Scientific EffectStress redistribution: Fracture Mechanics

Data Source

PatentUS10056339B2Semiconductor devices

Publication Date: 2018.08.21 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device includes a substrate, a first insulation layer, data storage elements, a contact plug, and a first dummy dam. The first insulation layer is on the substrate and includes a pad region and a peripheral region adjacent to the pad region. The data storage elements are on the pad region of the first insulation layer. The contact plug penetrates the first insulation layer on the peripheral region. The first dummy dam penetrates the first insulation layer and is disposed between the data storage elements and the contact plug.