Semiconductor Die Layout With Dummy Dies for Precise Wafer Separation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor packages, such as CoWoS structures, face challenges in achieving optimal integration density and packaging efficiency, particularly in advanced applications like cloud computing and supercomputing, due to limitations in feature size reduction and packaging area.
Innovation Solution
A semiconductor structure is developed with functional and dummy dies arranged on a carrier, encapsulated by an insulating layer, and featuring a redistribution structure, seal rings, and alignment marks, allowing for precise sawing and assembly into a semiconductor wafer, enhancing integration and packaging efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature size is reduced to increase integration density, then more devices can be integrated into a given area, but manufacturing precision and reliability deteriorate
Solution Approach 1:
The patent divides the semiconductor wafer into multiple functional regions including active device regions, isolation regions, and dummy device regions. This segmentation allows different areas to serve different purposes: active regions for high-density integration, isolation regions for electrical separation and stress control, and dummy regions for maintaining manufacturing process uniformity without adding functional complexity.
Solution Approach 2:
The patent implements local quality by creating distinct structural characteristics in different regions of the wafer. Active regions have optimized transistor structures for high performance, while dummy regions have simplified structures that match the manufacturing process requirements. This local differentiation allows the system to achieve high integration density in active areas while maintaining manufacturing precision through controlled dummy structures in other areas.
2Area of stationary object
If packaging area is reduced for smaller packages, then package size decreases, but manufacturing precision and assembly reliability worsen
Solution Approach 1:
The patent utilizes the vertical dimension by forming three-dimensional structures such as FinFET transistors and stacked device configurations. This allows increased integration density without proportionally increasing the planar package area, as devices are arranged in multiple layers and vertical orientations rather than only in a single plane.
Solution Approach 2:
The patent employs nested structures where smaller functional units are integrated within larger structural frameworks. Dummy devices are nested within the overall device array, and isolation structures are nested between active devices. This nesting allows efficient space utilization that reduces package area while maintaining manufacturing precision through standardized structural patterns.
3Productivity
If dummy devices are added to improve manufacturing uniformity, then integration density improves, but device complexity increases
Solution Approach 1:
The patent extracts the manufacturing function from the functional device operation. Dummy devices are specifically designed to fulfill only the manufacturing process requirements such as maintaining etch uniformity, deposition consistency, and stress balance, without performing computational or logical functions. This separation allows the active devices to focus on functionality while dummy devices handle manufacturing uniformity.
Solution Approach 2:
The patent controls the complexity of dummy devices by adjusting their structural parameters to match only the essential manufacturing requirements. Rather than creating complex dummy structures, the patent optimizes simple geometric parameters such as device width, spacing, and material composition to achieve the desired manufacturing uniformity with minimal structural complexity.
Data Source
AI summary
A semiconductor structure includes a functional die, a dummy die, a conductive feature and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die and disposed in a dielectric layer. The alignment mark is disposed in the dielectric layer, wherein the alignment mark is electrically isolated from the dummy die.