Semiconductor Gate Layout Using Dummy Diffusion Breaks
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Solution Overview
Problem
Semiconductor devices face challenges in achieving both high integration and high performance, as they often require reduced area for small devices and increased operating speed for large devices, leading to defects due to over-etching in empty spaces between gate structures during the etching process.
Innovation Solution
The use of dummy diffusion breaks as an etching stop layer in regions without gate structures, made of the same material as single diffusion breaks, to prevent over-etching and maintain etching selectivity, thereby reducing defects and enhancing integration and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the etching process is performed to remove interlayer insulating layer material, then the etching speed increases and productivity improves, but over-etching occurs in empty spaces between gate structures causing defects
Solution Approach 1:
A dummy gate structure is introduced as an intermediary element in the empty space between actual gate structures. This dummy structure serves as a mediator that protects the underlying substrate and interlayer insulating layer from over-etching during the etching process, while not interfering with the functionality of the actual gate structures.
Solution Approach 2:
The dummy gate structure is formed in advance during the gate structure formation process, before the etching of the interlayer insulating layer occurs. This preliminary action ensures that the protective structure is already in place to prevent over-etching defects during subsequent processing steps.
2Area of stationary object
If the area of the semiconductor device is reduced to achieve high integration, then the device size decreases and integration increases, but the operating speed may be reduced
Solution Approach 1:
The dummy gate structure is placed only in specific empty spaces between gate structures where it is needed for protection, rather than uniformly across the entire device. This localized approach maintains high integration by minimizing the additional area occupied while providing targeted protection against over-etching.
3Reliability
If additional processing steps are added to prevent over-etching, then defect rate decreases and reliability improves, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The formation of the dummy gate structure is merged with the existing gate structure formation process. The same photolithography and deposition steps used to create the actual gate structures are also used to create the dummy gate structures, eliminating the need for separate processing steps and reducing manufacturing complexity.
Data Source
AI summary
Provided is a semiconductor device including a substrate having a first region and a second region spaced apart from each other, a plurality of first gate structures disposed in the first region, spaced apart from each other in a first horizontal direction, extending in a second horizontal direction perpendicular to the first horizontal direction, and having a first width, a plurality of second gate structures disposed in the second region, spaced apart from each other in the first horizontal direction, extending in the second horizontal direction, and having a second width greater than the first width, a plurality of single diffusion breaks arranged between the plurality of first gate structures and extending in the second horizontal direction, and a plurality of dummy diffusion breaks arranged between the first region and the second region, extending in the second horizontal direction, and including the same material as the single diffusion breaks.