Semiconductor Device Dummy Gate Inspection Circuit
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Solution Overview
Problem
Existing semiconductor devices require coupling a dummy gate pad with an emitter electrode for withstand voltage inspection on the gate insulator film, which complicates the process and may generate an inversion layer, necessitating a solution to stabilize the electric potential without this coupling.
Innovation Solution
A semiconductor device design incorporating a dummy gate electrode and specific elements that allow voltage application between the emitter electrode and the dummy gate electrode for inspection, while maintaining an electric potential that does not contribute to inversion layer generation, using diodes or resistors to control conduction during both inspection and operation phases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a dummy gate pad is coupled with an emitter electrode for withstand voltage inspection, then the gate insulator film can be inspected, but the process becomes complicated and additional pads and wirings are required
Solution Approach 1:
The patent merges the dummy gate pad with the main gate pad, making them share a common pad structure. This eliminates the need for a separate dummy gate pad and its associated wiring, thereby reducing device complexity while still enabling withstand voltage inspection on the gate insulator film through the shared pad
Solution Approach 2:
The common gate pad serves multiple functions: it acts as the control electrode for the main gate electrode during normal operation, and simultaneously serves as the dummy gate electrode for withstand voltage inspection of the gate insulator film. This multi-functionality eliminates the need for dedicated separate structures for inspection purposes
2Stability of the object's composition
If a dummy gate pad is coupled with an emitter electrode to stabilize electric potential, then inversion layer generation is prevented, but the coupling process adds complexity
Solution Approach 1:
The patent merges the dummy gate electrode function into the main gate electrode structure, where the same gate electrode serves both as the control electrode for channel formation and as the dummy gate for potential stabilization during inspection. This eliminates the need for separate coupling processes while maintaining electric potential stability
Solution Approach 2:
The gate electrode structure serves itself by functioning as both the active control electrode for the transistor and the dummy gate electrode for withstand voltage inspection and potential stabilization. The same structure performs multiple functions without requiring external coupling or additional components
3Reliability
If separate dummy gate pad and main gate pad are used, then inspection can be performed, but switching speed is reduced due to increased feedback capacity
Solution Approach 1:
The patent merges the dummy gate pad and main gate pad into a single common gate pad structure. This reduction in the number of pads and interconnections decreases the feedback capacity (parasitic capacitance) in the gate circuit, thereby improving switching speed while still enabling withstand voltage inspection functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables effective withstand voltage inspection on the gate insulator film without coupling the dummy gate pad with the emitter electrode, stabilizing the electric potential of the dummy gate electrode and reducing the number of pads and wirings, thereby improving switching speed and reducing feedback capacity.
Implementation Method 1
a first element that is arranged between the dummy gate electrode and the gate pad, shuts down or restricts conduction when applying a first voltage, and permits the conduction when applying a second voltage
Implementation Method 2
a second element that is arranged between the emitter electrode and a connection point between the dummy gate electrode and the first element, permits the conduction when applying the first voltage, and shuts down or restricts the conduction when applying the second voltage
Data Source
AI summary
A semiconductor device includes: a semiconductor substrate providing a drift layer; a base layer; a plurality of trenches; an emitter region; an emitter electrode; a collector layer; a collector electrode; a main gate electrode for providing an inversion layer and a dummy gate electrode not providing the inversion layer; a common gate pad; a first element that is arranged between the dummy gate electrode and the gate pad, shuts down or restricts conduction when applying a first voltage, and permits the conduction when applying a second voltage; and a second element that is arranged between the emitter electrode and a connection point between the dummy gate electrode and the first element, permits the conduction when applying the first voltage, and shuts down or restricts the conduction when applying the second voltage.