Semiconductor Device Dummy Gate Isolation and Contact Overlap
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving improved electrical characteristics, particularly in high-reliability, high-speed, and multi-functional applications due to complex structures and integration demands.
Innovation Solution
The semiconductor device incorporates a field effect transistor design with a first active pattern, a dummy gate electrode, a contact structure, and a power line, where the contact structure overlaps the power line, enhancing electrical connectivity and reducing resistance through protruding portions, and the dummy gate electrodes electrically isolate adjacent standard cells, eliminating the need for additional insulating structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional insulating structures are used to isolate adjacent standard cells, then isolation reliability is improved, but device complexity and manufacturing steps increase
Solution Approach 1:
The dummy gate electrode structure is merged with the isolation function between standard cells. The gate electrode extends across the boundary between first and second standard cells, providing both gate functionality and electrical isolation simultaneously, thereby eliminating the need for separate insulating structures.
Solution Approach 2:
The dummy gate electrode serves multiple functions: it acts as a gate electrode for the transistor, provides electrical isolation between adjacent standard cells, and maintains structural continuity. This multi-functionality reduces the number of components needed and simplifies the overall device architecture.
2Ease of manufacture
If conventional non-overlapping contact and power line structures are used, then manufacturing simplicity is maintained, but electrical resistance increases
Solution Approach 1:
The contact structure and power line are positioned to overlap in the planar dimension rather than being arranged sequentially. This spatial reconfiguration in the two-dimensional plane reduces the electrical path length and resistance without adding vertical complexity or additional manufacturing steps.
3Productivity
If device area is reduced for high integration, then productivity and cost are improved, but electrical characteristics deteriorate
Solution Approach 1:
The dummy gate electrode simultaneously serves as both a functional gate electrode and an isolation structure between standard cells. This merging of functions eliminates the need for additional isolation components, thereby reducing the overall device area while maintaining proper electrical isolation and characteristics.
Data Source
AI summary
A semiconductor device includes a first active pattern extending in a first direction on a first region and a second region of a substrate, a first dummy gate electrode extending in a second direction crossing the first active pattern between the first region and the second region, a contact structure contacting the first dummy gate electrode and extending in the first direction, and a power line disposed on the contact structure and electrically connected to the contact structure. The power line extends in the first direction. The contact structure overlaps with the power line when viewed in a plan view.