Semiconductor Device Dummy Gate Leakage Suppression
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Solution Overview
Problem
In semiconductor devices, the variation in gate length between outermost and inner gate electrodes due to differences in pattern density during exposure can lead to increased leakage current, especially when a dummy gate electrode is used to improve pattern density uniformity.
Innovation Solution
A semiconductor device design that includes a gate electrode, a dummy gate electrode, and a conductive connection between the dummy gate electrode and a semiconductor area, which helps to moderate the electric field and reduce leakage current by ensuring the potential of the dummy gate electrode is equal to the semiconductor area, thereby suppressing junction leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a dummy gate electrode is provided to improve pattern density uniformity, then manufacturing precision is improved, but leakage current increases
Solution Approach 1:
A semiconductor area with conductive type is introduced as an intermediary element between the dummy gate electrode and the substrate. This intermediary structure provides a controlled electrical connection that equalizes potential between the dummy gate electrode and surrounding regions, thereby suppressing junction leakage while preserving the pattern density uniformity benefit
Solution Approach 2:
The electrical parameters (conductive type and potential) of the region beneath the dummy gate electrode are actively modified by introducing a semiconductor area with specific conductive type. This parameter change transforms the region from a passive area that generates leakage to an active component that suppresses leakage through controlled electrical properties
2Manufacturing precision
If pattern density varies in exposure, then gate length precision deteriorates, but adding dummy structures increases device complexity
Solution Approach 1:
The dummy gate electrode structure serves multiple functions simultaneously: it acts as a pattern density compensation element during exposure and, when combined with the semiconductor area, functions as a leakage suppression structure. This multi-functionality reduces the need for separate structures, thereby limiting the increase in device complexity
3Reliability
If dummy gate electrode is added to suppress leakage, then reliability is improved, but pattern density uniformity deteriorates
Solution Approach 1:
The semiconductor area with conductive type serves as a mediator that enables the dummy gate electrode to suppress leakage without compromising pattern density uniformity. It provides a controlled electrical pathway that achieves reliability improvement while maintaining the optical properties needed for uniform patterning
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces junction leakage current and maintains processing accuracy by ensuring uniform pattern density, even in areas with low pattern density, thereby improving the overall performance of the semiconductor device.
Implementation Method 1
a conductor electrically connecting the first semiconductor area with the dummy gate electrode
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a gate electrode disposed over the semiconductor substrate and extending in a first direction, a dummy gate electrode disposed over the semiconductor substrate away from the gate electrode and extending in the first direction, a first semiconductor area of a first conductive type disposed in a surface layer portion of the semiconductor substrate between the gate electrode and the dummy gate electrode, and a conductor electrically connecting the first semiconductor area with the dummy gate electrode.