Semiconductor Device With Dummy Gate Structures
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Solution Overview
Problem
Current semiconductor devices face challenges in increasing density and improving performance due to limitations in gate structure design and channel region configuration, particularly in multi-gate transistors, which affect integration density, reliability, and short channel effects.
Innovation Solution
The semiconductor device incorporates a substrate with NMOS and PMOS formation regions, featuring specific active patterns, dummy gate structures, and element separation structures, allowing for a three-dimensional channel configuration and improved gate control, which enhances integration density and suppresses short channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multi-gate transistor structures are used to increase integration density, then the number of transistors per unit area increases, but short channel effects become more severe
Solution Approach 1:
The patent transitions from planar gate structures to three-dimensional multi-gate structures (FinFET, nanowire, nanosheet) that extend vertically and wrap around the channel. This dimensional change increases the gate's control over the channel while maintaining scaling, thereby improving integration density without sacrificing reliability by effectively suppressing short channel effects through enhanced electrostatic control.
Solution Approach 2:
The gate structure is nested around the channel region in a wrap-around configuration, with the gate enveloping the channel from multiple sides. This nested arrangement maximizes the gate's control surface area relative to the channel volume, providing superior electrostatic control that suppresses short channel effects while enabling higher density integration.
2Ease of manufacture
If conventional gate structures are used, then manufacturing processes are simpler, but integration density and performance are limited
Solution Approach 1:
The manufacturing process is segmented into distinct stages: forming the channel structure first, then depositing gate materials, followed by patterning and planarization. This segmentation of the complex multi-gate fabrication into manageable steps maintains manufacturing feasibility while achieving advanced three-dimensional gate structures that dramatically increase integration density compared to conventional planar gates.
Data Source
AI summary
A semiconductor device includes a substrate including NMOS and PMOS regions; first and second active patterns on the NMOS region; third and fourth active patterns on the PMOS region, the third active pattern being spaced apart from the first active pattern; a first dummy gate structure on the first and third active patterns; a second dummy gate structure on the second and fourth active patterns; a normal gate structure on the third active pattern; a first source/drain pattern on the third active pattern and between the normal gate structure and the first dummy gate structure; and a first element separation structure between the first and second dummy gate structures and separating the third and fourth active patterns, wherein the first dummy gate structure includes a first dummy insulation gate intersecting the third active pattern.