Semiconductor Dummy Patterns for Outgassing Control
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Solution Overview
Problem
Current semiconductor device manufacturing processes face challenges with uncontrolled outgassing during thin-film forming and annealing processes, leading to defects such as popping defects, which affect mass production efficiency and electrical properties.
Innovation Solution
Incorporating dummy patterns that extend into the molding layer, serving as paths for discharging gases generated inside the molding layer, thereby controlling outgassing and reducing defect occurrence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thin-film forming and annealing processes are performed in conventional semiconductor manufacturing, then device functionality is achieved, but uncontrolled outgassing causes popping defects and reduces production efficiency
Solution Approach 1:
The molding layer is segmented by forming dummy patterns (dummy isolation patterns or dummy channel structures) that divide the continuous molding layer into multiple regions. These segmented regions create controlled pathways for gas discharge, preventing gas accumulation and popping defects while maintaining production efficiency
Solution Approach 2:
Dummy patterns serve as intermediary structures between the molding layer and the external environment. These patterns provide controlled interfaces for gas to escape from the molding layer during thin-film forming and annealing processes, preventing uncontrolled outgassing and popping defects
2Reliability
If dummy patterns are added to control outgassing, then defect occurrence is reduced, but device structure complexity increases
Solution Approach 1:
Dummy patterns are simplified copies or replicas of actual functional structures (isolation patterns or channel structures). These copied structures replicate the gas discharge function without requiring full functional complexity, reducing the overall device complexity while maintaining reliability
Solution Approach 2:
Dummy patterns are discarded structures that do not perform active functional roles in device operation. They are recovered as useful elements for controlling outgassing during manufacturing, separating their process function from operational function to maintain device simplicity
Data Source
AI summary
A semiconductor device including a substrate having a cell, peripheral, and boundary area; a stack structure on the cell area and including insulating and interconnection layers that are alternately stacked; a molding layer on the peripheral area boundary areas; a selection line isolation pattern extending into the stack structure; a cell channel structure passing through the stack structure; and first dummy patterns extending into the molding layer on the peripheral area, wherein upper surfaces of the first dummy patterns, an upper surface of the selection line isolation pattern, and an upper surface of the cell channel structure are coplanar, and at least one of the first dummy patterns extends in parallel with the selection line isolation pattern or cell channel structure from upper surfaces of the first dummy patterns, the upper surface of the selection line isolation pattern, and the upper surface of the cell channel structure toward the substrate.