Semiconductor Device Dummy Trench Screening via Recessed Emitter

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Solution Overview

Problem

Conventional semiconductor devices with dummy trench structures face challenges in applying a suitable electric field for screening due to the fixed potential of the dummy trench, making it difficult to evaluate the reliability of the dummy insulating film and gate insulating film effectively.

Innovation Solution

A semiconductor device design that includes a dummy trench, a recessed emitter electrode with a dummy pad and wire connections, allowing for the application of a prescribed voltage to the dummy conduction portion and gate conduction portion during the screening process, enabling accurate evaluation of the insulating films.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a dummy trench structure with fixed potential is used, then the device structure is simplified and manufacturing is easier, but it becomes impossible to apply a suitable electric field for screening to the dummy trench region

Engineering Contradiction:
Improveease of manufactureVSAvoidscreening capability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The emitter electrode is divided into a main body portion and a recessed portion, with the dummy pad specifically positioned within the recessed portion. This segmentation allows the dummy trench to be electrically connected to the emitter electrode through the recessed portion, enabling independent voltage application to the dummy trench region while maintaining the overall device structure

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A recessed portion is created in the emitter electrode, forming a three-dimensional structure with depth. The dummy pad is positioned within this recessed portion, allowing electrical connection to the dummy trench from below. This dimensional change enables the application of electric fields to the dummy trench region without affecting the planar layout of other device components

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If the dummy pad is positioned within the recessed portion of the emitter electrode, then suitable electric fields can be applied to the dummy trench region for screening, but the device structure becomes more complex

Engineering Contradiction:
Improvescreening capabilityVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The dummy pad is merged with the emitter electrode structure by positioning it within the recessed portion of the emitter electrode. This integration allows the dummy pad to be formed using the same electrode formation processes as the main emitter electrode, reducing the need for separate fabrication steps and minimizing additional device complexity

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The recessed portion acts as an intermediary structure that facilitates electrical connection between the dummy pad and the dummy trench. By creating this recessed portion in the emitter electrode, the patent enables indirect electrical connection to the dummy trench region without requiring direct access from the device surface, thus maintaining structural integrity while enabling screening functionality

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design allows for reliable screening of the dummy and gate insulating films, improving the evaluation process and ensuring the quality of the semiconductor device by enabling the application of a suitable electric field to the dummy trench region.

Implementation Method 1

a dummy wire that electrically connects the emitter electrode and the dummy pad

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

applying a suitable electric field to a semiconductor device having a trench structure after the device has been completed

Methodology Applied
Scientific EffectElectric field: Electric Field

Implementation Method 3

screening the device by applying a suitable electric field... for evaluation of the insulating films

Methodology Applied
Scientific EffectElectrical breakdown: Avalanche Breakdown

Data Source

PatentUS9870965B2Semiconductor device
Publication Date: 2018.01.16 FUJI ELECTRIC CO LTD
  • US9870965B2 patent drawing
  • US9870965B2 patent drawing
  • US9870965B2 patent drawing

AI summary

Provided is a semiconductor device including a semiconductor substrate; a dummy trench that is formed on a front surface side of the semiconductor substrate; an emitter electrode that is formed above a front surface of the semiconductor substrate and includes a recessed portion that is a recess in an outer periphery thereof, as seen in a planar view; a dummy pad that is electrically connected to the dummy trench and has at least a portion thereof formed within the recessed portion, as seen in the planar view; and a dummy wire that electrically connects the emitter electrode and the dummy pad.