Semiconductor Device Dummy Vias Pattern Density
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Solution Overview
Problem
Highly integrated and complex semiconductor devices face challenges in achieving high reliability, high speed, and multiple functionalities due to the complexity of their design and manufacturing processes, particularly in the integration of transistors and interconnection lines.
Innovation Solution
The semiconductor device incorporates a substrate with active patterns, gate electrodes, active contacts, regular and dummy vias, and interconnection lines, where the dummy vias increase pattern density to minimize light distortion during exposure processes and enhance the integration of transistors and interconnection lines, allowing for improved manufacturing efficiency and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dummy vias are added to increase pattern density, then light distortion is reduced and manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent applies the copying principle by introducing dummy vias that replicate the structure and material composition of regular vias. These dummy vias are strategically placed in interlayer insulating layers to increase overall pattern density, thereby reducing light distortion during exposure processes. The dummy vias are copies of regular vias in terms of structure (via body portion and via barrier portion) but serve a different functional purpose of improving manufacturing precision without requiring new via types.
Solution Approach 2:
The patent applies parameter changes by modifying the density parameter of the via pattern distribution. By adding dummy vias to change the spatial distribution and density of vias in the interlayer insulating layers, the patent optimizes the exposure process parameters indirectly, reducing light distortion effects and improving manufacturing precision without changing the fundamental via structure.
2Productivity
If more vias and interconnection lines are integrated, then productivity and device functionality are improved, but manufacturing precision and reliability may deteriorate
Solution Approach 1:
The patent applies parameter changes by optimizing the density parameter of via distribution through the introduction of dummy vias. This changes the overall pattern density parameter, which in turn improves exposure process uniformity and maintains manufacturing precision even as integration density increases. The parameter change in via distribution pattern compensates for the potential quality deterioration from higher integration.
Solution Approach 2:
The patent uses copying by creating dummy vias that replicate regular via structures. These copied via structures contribute to the overall pattern density without compromising the quality of actual electrical connections, allowing higher integration density while maintaining manufacturing precision through the replicated structural elements.
3Adaptability or versatility
If the number of interlayer insulating layers and vias is increased, then device functionality and integration are improved, but ease of manufacture decreases
Solution Approach 1:
The patent applies universality by designing dummy vias with the same structural characteristics as regular vias (via body portion and via barrier portion). This multi-functional approach allows the via formation process to serve dual purposes: creating electrical connections through regular vias and improving pattern density through dummy vias, thereby enhancing device functionality without proportionally increasing manufacturing process complexity.
Solution Approach 2:
The patent applies parameter changes by modifying the via distribution density parameter through dummy via addition. This parameter change enables the manufacturing process to achieve better exposure results and improved device functionality without requiring fundamentally new manufacturing steps, thus maintaining relative ease of manufacture while enhancing adaptability.
Data Source
AI summary
A semiconductor device includes a substrate having a plurality of active patterns. A plurality of gate electrodes intersects the plurality of active patterns. An active contact is electrically connected to the active patterns. A plurality of vias includes a first regular via and a first dummy via. A plurality of interconnection lines is disposed on the vias. The plurality of interconnection lines includes a first interconnection line disposed on both the first regular via and the first dummy via. The first interconnection line is electrically connected to the active contact through the first regular via. Each of the vias includes a via body portion and a via barrier portion covering a bottom surface and sidewalls of the via body portion. Each of the interconnection lines includes an interconnection line body portion and an interconnection line barrier portion covering a bottom surface and sidewalls of the interconnection line body portion.