Semiconductor Active Region Layout With Variable Dummy Widths
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Solution Overview
Problem
The integration density of semiconductor devices is limited by the dummy regions, which do not contribute to the active circuit areas, and existing designs struggle to efficiently utilize space for increased performance and multifunctionality.
Innovation Solution
The semiconductor device incorporates a pair of dummy active regions with width-changing portions between adjacent line patterns, allowing for a more efficient layout by using the dummy regions to buffer the widths of circuit active regions, maintaining uniformity and improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dummy regions are used to maintain uniformity of circuit active regions, then reliability is improved, but integration density deteriorates due to increased spacing requirements
Solution Approach 1:
The patent introduces width-changing portions that vary the width of dummy active regions in the second horizontal direction between adjacent line patterns. This dimensional variation allows dummy regions to maintain uniformity with circuit active regions while occupying less area, thereby improving integration density without sacrificing reliability.
2Area of stationary object
If gap between circuit active regions is reduced to improve integration density, then space utilization is improved, but uniformity and reliability deteriorate
Solution Approach 1:
The patent applies local quality by making the width of dummy active regions position-dependent. Specifically, the width varies in the second horizontal direction between adjacent line patterns, with narrower widths near line patterns and wider widths in intermediate regions. This local variation allows tight spacing while maintaining uniformity where it matters most for reliability.
3Reliability
If uniform width of circuit active regions is maintained to improve reliability, then device performance is improved, but integration density deteriorates due to increased area consumption
Solution Approach 1:
The patent makes the width of dummy active regions dynamic rather than static. The width changes continuously or in steps in the second horizontal direction between adjacent line patterns, transitioning from narrower widths near line patterns to wider widths in intermediate regions. This dynamic width adjustment allows the structure to satisfy uniformity requirements while minimizing area consumption for maximum integration density.
Data Source
AI summary
A semiconductor device includes a pair of first and second dummy active regions extending in a first horizontal direction and spaced apart from each other in a second horizontal direction; a pair of first and second circuit active regions extending in the first horizontal direction and spaced apart in the second horizontal direction; and a plurality of line patterns extending in the second horizontal direction and spaced apart in the first horizontal direction. The pair of first and second dummy active regions may be between a pair of line patterns adjacent to each other among the plurality of line patterns. At least one of the first and second dummy active regions may have a width-changing portion in which a width of the at least one of the first and second dummy active regions changes in the second horizontal direction between the pair of line patterns adjacent to each other.