Semiconductor Edge Termination via Compensation Doping

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Solution Overview

Problem

Existing semiconductor device edge termination methods are complex and require multiple mask processes to achieve the necessary dielectric strength, leading to field strength peaks that can cause premature breakdowns and increased leakage currents due to the narrow edge width.

Innovation Solution

A near-surface compensation doping area with a conductivity type opposite to the transition doping area is introduced, providing lateral constant or decreasing doping to compensate for the transition doping, reducing the need for a channel stopper and allowing for a narrower edge width without compromising blocking capability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional edge termination structures are used, then dielectric strength is achieved, but device complexity increases due to multiple mask processes

Engineering Contradiction:

Improvedielectric strengthVSAvoidmask processes

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent changes the doping parameter by introducing a near-surface compensation doping area with opposite conductivity type to the transition doping area. This compensation doping modifies the electrical field distribution, eliminating field strength peaks while maintaining dielectric strength, thereby simplifying the overall edge termination structure without requiring multiple mask processes

Inventive Principle:

Principle #35Parameter changes

2Reliability

If conventional edge termination structures are used, then dielectric strength is achieved, but field strength peaks occur causing premature breakdowns

Engineering Contradiction:

Improvedielectric strengthVSAvoidfield strength peaks

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary anti-action by introducing a near-surface compensation doping area with opposite conductivity type before the field strength peaks can cause premature breakdowns. This compensation doping pre-establishes a favorable electrical field distribution that counteracts the harmful field strength peaks, preventing avalanche breakdown and dielectric breakdown in advance

Inventive Principle:

Principle #9Preliminary anti-action

3Reliability

If conventional edge termination structures are used, then blocking capability is maintained, but edge width increases to 1200 μm

Engineering Contradiction:

Improveblocking capabilityVSAvoidedge width

Core Design Contradiction:

ReliabilityVSLength of moving object

Solution Approach 1:

The patent changes the doping concentration parameter by introducing compensation doping with opposite conductivity type. This modifies the electrical field distribution and potential gradient across the edge region, enabling the blocking capability to be maintained with a reduced edge width of 850 μm instead of the conventional 1200 μm

Inventive Principle:

Principle #35Parameter changes

4Ease of manufacture

If conventional edge termination structures are used, then edge structures are produced, but manufacturing time increases due to multiple mask processes

Engineering Contradiction:

Improveedge structure productionVSAvoidmask processes

Core Design Contradiction:

Ease of manufactureVSLoss of time

Solution Approach 1:

The patent merges the edge termination structure production into a simplified process by introducing a near-surface compensation doping area that can be formed in fewer manufacturing steps. The compensation doping is integrated into the edge termination structure, combining multiple functions into a unified structure that reduces the number of separate mask processes required

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach eliminates field strength peaks, reduces the edge width from 1200 μm to 850 μm, maintains blocking capability, and minimizes the impact of foreign surface charges, enhancing the reliability and simplicity of edge structure production.

Implementation Method 1

a near-surface compensation doping area with a conductivity type, which is different than the conductivity type of a transition doping area of the semiconductor material region, is provided in the surface region of the semiconductor material region. The doping of the near-surface compensation doping area at least partially compensates for the doping in the transition doping area

Methodology Applied

Scientific EffectDoping compensation: Dopants

Data Source

PatentUS7880272B2Semiconductor device with near-surface compensation doping area and method of fabricating

Publication Date: 2011.02.01 INFINEON TECHNOLOGIES AG

AI summary

Aspects of the present invention include a semiconductor device and method. In a transition region of a semiconductor material region, a near-surface compensation doping area with a conductivity type, which is different than the conductivity type of a transition doping area of the semiconductor material region, is provided in the surface region of the semiconductor material region. The doping of the near-surface compensation doping area of the semiconductor device at least partially compensates for the doping in the transition doping area.