Semiconductor Edge Termination Layout With Simultaneous P-Type Doping
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Solution Overview
Problem
Conventional semiconductor devices require additional photolithography and manufacturing steps to achieve optimal doping in the edge termination region for high-voltage applications, which complicates the process and reduces yield.
Innovation Solution
A semiconductor device design that includes a substrate with a main body featuring a cell region and an edge termination region, where p-type doping is performed directly in a p-type semiconductor, allowing simultaneous doping of the edge termination and cell regions, reducing the number of photolithography steps and incorporating specific doping concentrations and structures to enhance breakdown voltage tolerance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If additional photolithography and manufacturing steps are conducted to achieve optimal doping in the edge termination region, then the breakdown voltage tolerance is improved, but the device complexity and manufacturing cost increase
Solution Approach 1:
The edge termination region is segmented into multiple doping zones (first edge termination region with higher doping concentration and second edge termination region with lower doping concentration) that can be formed in separate manufacturing steps. This segmentation allows each zone to be optimized independently for voltage withstand capability while maintaining overall process feasibility without requiring complete redesign of the manufacturing flow
Solution Approach 2:
The first edge termination region with higher doping concentration is formed preliminarily before the second edge termination region. This preliminary action establishes a foundation that simplifies subsequent doping steps, as the preliminary doped structure serves as a template that guides later lower-concentration doping, thereby reducing the complexity of achieving optimal multi-zone doping profiles
2Manufacturing precision
If additional photolithography and manufacturing steps are conducted to achieve optimal doping in the edge termination region, then the breakdown voltage tolerance is improved, but the manufacturing yield decreases
Solution Approach 1:
The patent applies partial action by forming the first edge termination region with higher doping concentration only in specific areas where voltage withstand is most critical, rather than uniformly across the entire device. This partial doping approach achieves the necessary precision for high-voltage operation in key regions while avoiding unnecessary manufacturing steps in other areas, thereby maintaining higher production yield
Solution Approach 2:
By segmenting the edge termination region into zones with different doping concentrations that can be formed in separate but standardized manufacturing steps, the patent enables precise control where needed while maintaining process efficiency. The segmented approach allows each zone to be optimized independently, reducing the risk of defects across the entire wafer and improving overall manufacturing yield
3Reliability
If the edge termination region depth and doping concentration are optimized for high voltage withstand, then the breakdown voltage is improved, but additional manufacturing steps are required
Solution Approach 1:
The patent applies local quality by creating regions with different doping concentrations (higher in the first edge termination region, lower in the second) at specific locations within the edge termination zone. This local differentiation of material properties achieves optimal voltage withstand capability in critical areas without requiring uniform high-concentration doping across the entire structure, thereby reducing the number of manufacturing steps needed while maintaining high reliability
Solution Approach 2:
The preliminary formation of the first edge termination region with higher doping concentration establishes a foundation that simplifies subsequent manufacturing steps. This preliminary action creates a structured template that guides later doping processes, allowing the second edge termination region to be formed with lower concentration in a simpler, more integrated step, thus achieving high voltage withstand without proportionally increasing process complexity
Data Source
AI summary
A semiconductor device includes a substrate, a main body, and an electrode unit. The main body is disposed on the substrate, and includes a cell region, an edge termination region surrounding the cell region, and an oxide insulation layer disposed on the cell region and the edge termination region so as to be spaced apart from the substrate. The cell region includes a first p-well region. The edge termination region includes a p-type extension unit adjacent to the first p-well region, an outer surrounding region surrounding the p-type extension unit, and a p-type doping region extending from the first p-well region toward the p-type extension unit. The electrode unit includes a source electrode disposed on the oxide insulation layer, a drain electrode disposed on the substrate opposite to the main body, and a gate electrode disposed in the oxide insulation layer and corresponding in position to the cell region.