Semiconductor Edge Termination Doping Structure
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high breakdown voltage while maintaining low leakage current, as they often struggle to effectively manage the expansion of the space charge region, leading to unstable edge termination properties.
Innovation Solution
A semiconductor device with a common doping region comprising a first portion of high doping concentration, a second portion with lower doping concentration, and a third portion with a doping concentration at least 30% higher than the second portion, strategically located to control the expansion of the space charge region, thereby increasing breakdown voltage and reducing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If a high doping concentration is used in the common doping region, then the leakage current is reduced, but the breakdown voltage decreases
Solution Approach 1:
The common doping region is divided into three distinct portions (first, second, and third portions) with different doping concentration ranges. This segmentation allows each portion to fulfill different functions: the first portion reduces leakage current, while the third portion maintains breakdown voltage, resolving the contradiction between these two parameters.
Solution Approach 2:
Different portions of the common doping region are assigned different doping concentrations tailored to their specific locations and functions. The first portion has higher doping concentration to suppress leakage, while the third portion has lower doping concentration to maintain breakdown voltage. This local differentiation allows simultaneous optimization of both leakage current and breakdown voltage.
2Ease of manufacture
If the doping concentration is uniformly distributed, then the manufacturing process is simplified, but the edge termination properties become unstable
Solution Approach 1:
The common doping region is segmented into three portions with distinct doping concentration ranges. This segmentation creates stable edge termination properties by controlling the space charge region expansion, while still being manufacturable through controlled doping processes applied to different regions.
Solution Approach 2:
Different doping concentrations are applied to different portions of the common doping region based on their specific functional requirements. This local quality differentiation stabilizes edge termination properties while maintaining manufacturing feasibility through targeted doping processes.
3Device complexity
If the common doping region has a single doping concentration, then the device structure is simplified, but the breakdown voltage cannot be increased
Solution Approach 1:
The common doping region is divided into three portions with progressively different doping concentrations. This segmentation enables the device to achieve higher breakdown voltage by controlling space charge region expansion, while the overall structure remains relatively simple as all portions are within the same common doping region.
Solution Approach 2:
Different doping concentrations are assigned to different portions of the common doping region to optimize breakdown voltage. The first portion has higher doping concentration, while the third portion has lower doping concentration, creating the necessary conditions for high breakdown voltage without requiring complex multi-region structures.
Data Source
AI summary
A semiconductor device includes a common doping region located within a semiconductor substrate of the semiconductor device. The common doping region includes a first portion. A maximal doping concentration within the first portion is higher than 1·1015 cm−3. The common doping region includes a second portion. A minimal doping concentration within the second portion is lower than 50% of the maximal doping concentration within the first portion of the common doping region. The common doping region includes a third portion. A minimal doping concentration within the third portion is more than 30% higher than the minimal doping concentration within the second portion. The second portion of the common doping region is located vertically between the first portion of the common doping region and the third portion of the common doping region.