Semiconductor Edge Patterning With Ring-Shaped Dummy Structures

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Solution Overview

Problem

The optical proximity effect causes irregular patterns on the edges of semiconductor structures, and existing dummy functional structures are unstable and prone to deformation, affecting the overall semiconductor structure.

Innovation Solution

A forming method that includes forming ring-shaped dummy functional structures on either side of the semiconductor structure, using core pillars and mask layers to create stable dummy regions that absorb irregular patterns, ensuring the stability and integrity of the semiconductor structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If multiple spaced dummy functional structures are provided on one side of the functional structure to solve the optical proximity effect, then the pattern regularity is improved, but the dummy functional structures are not stable and prone to deformation

Engineering Contradiction:
Improvepattern regularityVSAvoiddummy structure stability
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent merges multiple spaced dummy functional structures into a single continuous dummy functional structure that spans across multiple functional structures. This merging approach maintains the optical proximity effect compensation function while providing structural stability, as the continuous structure prevents individual dummy elements from deforming independently.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The dummy functional structure is segmented into multiple regions (first dummy region, second dummy region, etc.) that are positioned on opposite sides of functional structures. Each segment serves as a stable anchor point while collectively maintaining pattern regularity through their distributed arrangement.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If dummy functional structures are provided to compensate for optical proximity effect, then the edge pattern quality is improved, but the device complexity increases

Engineering Contradiction:
Improveedge pattern qualityVSAvoidstructure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The dummy functional structures are designed to serve multiple purposes: they compensate for optical proximity effects, provide structural stability, and can be formed using the same manufacturing processes as functional structures. This multi-functionality reduces overall device complexity by eliminating the need for separate stabilization structures.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

Dummy functional structures are strategically placed only in regions where optical proximity effects occur (at edges of functional structures), while central regions maintain their original design. This localized approach improves edge pattern quality without unnecessarily increasing complexity across the entire device.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12198933B2Forming method of semiconductor structure and semiconductor structure
Publication Date: 2025.01.14 CHANGXIN MEMORY TECH INC
  • US12198933B2 patent drawing
  • US12198933B2 patent drawing
  • US12198933B2 patent drawing

AI summary

Embodiments of the present disclosure provide a forming method of a semiconductor structure and a semiconductor structure. The forming method includes: providing a base, the base includes a central region and dummy regions, and the central region includes a molding region and cutting regions; forming multiple spaced core pillars on the base; forming an initial mask layer surrounding and covering a sidewall of each core pillar on the base; removing the initial mask layers located in each cutting region to form multiple spaced mask sidewall strips in the molding region, and retaining at least one of the initial mask layers in each dummy region as a ring-shaped sidewall; removing the core pillars located in the central region and the dummy regions; and etching the base to form multiple functional structures, and etching the base to form dummy functional structures on two sides of the multiple functional structures.