Semiconductor Edge Structure Etching via Rotation
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Solution Overview
Problem
Existing methods for producing semiconductor component edge structures are complex and lack precise reproducibility, requiring multiple work steps and protective masking to achieve the desired electric field distribution and dielectric strength.
Innovation Solution
A method involving targeted application of a chemical etchant to the edge region of a rotating semiconductor body, controlling etching parameters like application location, direction, pressure, and temperature to produce precise edge structures without mechanical pre-processing or masking, allowing for automated and efficient production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional mechanical beveling and chemical polishing methods are used to produce edge structures, then the desired edge shape can be achieved, but the process complexity increases and manufacturing precision decreases due to multiple work steps and masking requirements
Solution Approach 1:
The patent extracts and removes the masking step from the conventional multi-step process. By applying chemical etching directly to the edge region without requiring protective masks on non-edge areas, the method simplifies the manufacturing process while maintaining precise edge structure formation. The chemical etchant selectively attacks only the edge region, eliminating the need for complex masking procedures.
Solution Approach 2:
The patent replaces mechanical beveling and polishing operations with a chemical etching process. Instead of using mechanical tools to physically remove material and shape the edge, a chemical etchant is applied to dissolve the semiconductor material in the edge region, achieving the desired edge shape through chemical reactions rather than mechanical force.
2Manufacturing precision
If multiple work steps including masking are used to produce precise edge structures, then the edge shape can be controlled, but the production time increases and productivity decreases
Solution Approach 1:
The patent merges multiple separate work steps (mechanical beveling, masking, chemical polishing) into a single integrated chemical etching process. By combining these operations into one step that directly produces the final edge structure without intermediate masking and multiple treatment stages, the method maintains manufacturing precision while significantly reducing production time and improving throughput.
3Reliability
If mechanical beveling is used as a pre-processing step, then the edge region can be prepared for chemical etching, but the overall process complexity increases
Solution Approach 1:
The patent extracts and eliminates the mechanical beveling pre-processing step from the overall process. The chemical etching method is designed to work directly on the as-received semiconductor substrate edge without requiring prior mechanical preparation, thereby reducing process complexity while maintaining etching reliability through direct chemical interaction with the edge region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the number of work steps, ensures high accuracy and reproducibility of edge structures, enhances dielectric strength by optimizing electric field distribution, and increases production quality while minimizing defects.
Implementation Method 1
a chemical etchant is applied specifically to at least one edge region of the semiconductor body in such a way that the etching effect is limited to the edge region
Implementation Method 2
the semiconductor body is rotated at the same time in such a way that the etching effect is limited to the edge region
Data Source
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AI summary
The invention relates to a method for producing an edge structure of a semiconductor component, comprising the following steps: providing a semiconductor body (100), wherein the semiconductor body (100) comprises the following: at least two main surfaces (102, 112) each comprising an edge (104, 114), and at least one edge region (106, 116, 126) adjoining at least one of the edges (104, 114); applying a chemical etching agent to at least one edge region (106, 116, 126) of the semiconductor body (100) in a targeted manner while simultaneously rotating the semiconductor body (100), such that the etching effect is limited to the edge region (106, 116, 126). A device for carrying out the method further comprises at least: a rotatable receiving means (205, 206) for receiving the semiconductor body (100); at least one displaceable nozzle device (210) for applying the chemical etching agent; and a controller for setting and monitoring etching parameters in a targeted manner, said parameters being selected from the group consisting of location of application, direction of application, quantity applied, pressure of application, temperature of application of the etching agent, and rotational speed of the semiconductor body (100).