Thin Semiconductor Edge Protection for Fracture and EMI Shielding

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Solution Overview

Problem

Conventional semiconductor devices are prone to fracturing at the edges due to inadequate edge protection during manufacturing, leading to potential failures and inefficiencies in packaging and electromagnetic interference shielding.

Innovation Solution

A thin semiconductor device design featuring a substrate with an edge-protection region formed by a conductive edge pattern that provides both mechanical protection and electromagnetic interference shielding, integrated into the manufacturing process through specific layer formation and singulation techniques.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If thin semiconductor device packages are manufactured, then device miniaturization and integration density are improved, but the packages become subject to fracturing at the edges

Engineering Contradiction:
Improvepackage thicknessVSAvoidedge fracture resistance
Core Design Contradiction:
Volume of moving objectVSStrength

Solution Approach 1:

The patent applies preliminary action by forming an edge protection structure during the manufacturing process before the device is fully assembled and before it would be subjected to stress. The conductive edge pattern is created on the substrate surface prior to final packaging, providing pre-established mechanical reinforcement that prevents fracture during subsequent handling and operation.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent employs composite materials by combining the substrate material with a conductive edge pattern material to create a hybrid structure. The edge protection structure consists of multiple layers including conductive patterns and dielectric materials, forming a composite that provides both mechanical strength and electrical functionality at the vulnerable edges.

Inventive Principle:
Principle #40Composite materials

2Strength

If edge protection structures are added to thin packages, then fracture resistance is improved, but device complexity increases

Engineering Contradiction:
Improveedge fracture resistanceVSAvoidmanufacturing process complexity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The patent merges multiple functions into the edge protection structure. The conductive edge pattern simultaneously provides mechanical reinforcement against fracture, electrical connectivity for signal transmission, and electromagnetic interference shielding. This consolidation eliminates the need for separate structural reinforcement elements that would otherwise be required.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The edge protection structure serves multiple purposes: it acts as a mechanical reinforcement to prevent fracture, provides electrical connection pathways, and functions as an electromagnetic shield. This multi-functionality reduces the overall device complexity by eliminating the need for separate components for each function.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Object-affected harmful factors

If conductive edge patterns are formed on substrate edges, then electromagnetic interference shielding is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improveelectromagnetic interferenceVSAvoidedge pattern formation precision
Core Design Contradiction:
Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

The patent applies local quality by concentrating the conductive material specifically at the edge regions of the substrate where electromagnetic interference is most problematic and where mechanical reinforcement is needed. The edge pattern is localized to peripheral areas rather than covering the entire substrate, optimizing EMI shielding where it is most effective while minimizing manufacturing complexity.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS11923280B2Semiconductor device and manufacturing method thereof
Publication Date: 2024.03.05 AMKOR TECH SINGAPORE HLDG PTE LTD
  • US11923280B2 patent drawing
  • US11923280B2 patent drawing
  • US11923280B2 patent drawing

AI summary

A thin semiconductor device with enhanced edge protection, and a method of manufacturing thereof. For example and without limitation, various aspects of this disclosure provide a thin semiconductor device comprising a substrate with an edge-protection region, and a method of manufacturing thereof.