Semiconductor Edge Resistivity Layout for Peripheral Heat Suppression
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in maintaining stable characteristics due to excessive temperature increases at the outermost periphery during switching operations, leading to thermal destruction and unreliable performance.
Innovation Solution
The semiconductor device design incorporates a semiconductor member with regions of varying electrical resistivity, where the second partial region has a higher resistivity than the first partial region, and the use of conductive members as field plates to suppress local electric field concentration, along with an insulating member to manage temperature and resistivity differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the semiconductor device operates with high current density, then the on-resistance is low, but excessive local temperature increase occurs at the outermost periphery
Solution Approach 1:
The patent applies local quality by creating a second partial region with higher electrical resistivity specifically at the outermost periphery of the semiconductor element, while maintaining lower resistivity in the inner regions. This localized resistivity modification targets the specific problem area (outermost periphery) without affecting the overall device performance, thereby suppressing local temperature increase while maintaining low on-resistance in the active regions.
2Temperature
If the electrical resistivity is increased at the outermost periphery to suppress temperature rise, then thermal destruction is prevented, but the on-resistance increases
Solution Approach 1:
The patent implements local quality by differentiating the electrical resistivity characteristics between different regions: the second partial region at the outermost periphery has higher resistivity to suppress temperature rise, while the first and third partial regions in the inner areas maintain lower resistivity to ensure low on-resistance. This spatial differentiation of electrical properties resolves the contradiction between thermal management and electrical performance.
Solution Approach 2:
The patent segments the semiconductor element into multiple partial regions (first, second, and third partial regions) with distinct electrical resistivity characteristics. This segmentation allows independent optimization of each region's properties, enabling the outermost periphery to have higher resistivity for thermal protection while the active regions maintain low resistivity for efficient current conduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively suppresses local temperature increases, enhances stability, and achieves low on-resistance, resulting in highly reliable power semiconductors with improved operational stability and reduced thermal destruction.
Implementation Method 1
an electrical resistivity of the second partial region is higher than an electrical resistivity of the first partial region
Implementation Method 2
excessive local temperature increases at the outermost periphery during switching operations
Implementation Method 3
conductive members acting as field plates to suppress local current concentration
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode; a fourth electrode, a semiconductor member, a first conductive member, a second conductive member, and an insulating member. The semiconductor member includes first, second and third semiconductor regions. The first semiconductor region includes a first outer edge region, a first partial region, a second partial region, a third partial region, and a fourth partial region. The first, third and fourth partial regions are of a first conductivity type. The second semiconductor region is of a second conductivity type. The third semiconductor region is of the first conductivity type. The second conductive member includes a first conductive portion. The insulating member includes a first insulating region and a second insulating region. An electrical resistivity of the second partial region is higher than an electrical resistivity of the first partial region.