Semiconductor Edge Termination Structure Miniaturization
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Solution Overview
Problem
Conventional edge termination structures in semiconductor devices face challenges in miniaturization due to excessive side-etching of metal field plates, which necessitate wider patterns and hinder the reduction of semiconductor chip size.
Innovation Solution
The semiconductor device incorporates a second field plate made from semiconductor material with a smaller side-etching amount, positioned between the first field plate and the electrode unit, allowing for a narrower width and easier miniaturization of the edge termination structure by effectively shielding external charges and reducing etching variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal field plate is used in the edge termination structure, then effective charge shielding is achieved, but side-etching amount increases requiring wider patterns which prevents miniaturization
Solution Approach 1:
The patent changes the material parameter of the field plate from metal to semiconductor material. This material substitution fundamentally alters the etching characteristics, reducing the side-etching amount and enabling pattern miniaturization while preserving the charge shielding function through the semiconductor material's electrical properties
Solution Approach 2:
The patent employs a composite structure combining semiconductor material (for the field plate requiring precision) and metal material (for the electrode unit requiring high conductivity). This composite approach allows each material to be used where its properties are most beneficial, achieving both miniaturization and effective charge shielding
2Manufacturing precision
If the field plate pattern width is increased to compensate for side-etching, then etching variation tolerance is improved, but the edge termination structure size increases preventing chip miniaturization
Solution Approach 1:
By changing the material parameter from metal to semiconductor, the etching behavior is fundamentally improved. The semiconductor material exhibits smaller side-etching and better etching uniformity, allowing narrow patterns to be formed with high precision without requiring additional width compensation
3Area of stationary object
If a narrower field plate pattern is used to enable miniaturization, then chip size is reduced, but side-etching control becomes more difficult reducing manufacturing precision
Solution Approach 1:
The material parameter change to semiconductor provides inherently better etching control that enables narrow pattern formation. The semiconductor material's properties ensure that even when pattern width is reduced for miniaturization, the side-etching remains controlled and uniform, maintaining manufacturing precision
Data Source
AI summary
To provide a semiconductor device in which an edge termination structure can be made smaller easily. A semiconductor device is provided, the semiconductor device including an active region and an edge termination structure formed on a front surface side of a semiconductor substrate, wherein an edge termination structure has a guard ring provided surrounding an active region on a front surface side of a semiconductor substrate, a first field plate provided on a front surface side of a guard ring, an electrode unit provided on a front surface side of a first field plate, a second field plate provided between a first field plate and a electrode unit, and a conductive connecting unit which mutually electrically connects a first field plate, an electrode unit, a second field plate, and a guard ring.