Semiconductor Contact Pad Layout With Restricted Edge Wire Etching
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Solution Overview
Problem
In the manufacturing of semiconductor structures, particularly for Dynamic Random Access Memory (DRAM), the connecting wires in the edge region are prone to breakage due to their small width and the difficulty in controlling the etching process, leading to excessive etching and structural integrity issues.
Innovation Solution
A method is introduced where a protective layer is formed between the conductive layer and the mask layer, with a restriction pattern created in the edge region to control the etching range, preventing excessive etching and breakage of connecting wires by restricting the etching degree of the conductive layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the etching process is performed without a restriction pattern, then the etching process is simple and fast, but the connecting wires in the edge region are prone to excessive etching and breakage
Solution Approach 1:
The substrate is divided into a first region (array region) and a second region (edge region), and the mask layer is correspondingly divided into a first pattern and a second pattern. This segmentation allows different etching control strategies to be applied to different regions, with the restriction pattern specifically applied to the edge region to protect connecting wires while maintaining simple processing for the array region.
Solution Approach 2:
The restriction pattern is formed in advance before the conductive layer etching process. By pre-forming this protective pattern in the edge region, the patent prevents excessive etching and connecting wire breakage during subsequent processing steps, addressing the problem before it occurs.
2Quantity of substance
If the connecting wires are made narrower to increase density, then the memory cell density increases, but the connecting wires become more prone to breakage
Solution Approach 1:
The patent applies different patterns to different regions: the first pattern in the array region and the second pattern (restriction pattern) in the edge region. This local differentiation allows narrow connecting wires in the edge region to be protected during etching, enabling high density without sacrificing reliability of the fragile connecting wires.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the dimensional accuracy and structural integrity of the connecting wires, reducing the risk of breakage and improving the overall performance of the semiconductor structure by accurately controlling the etching process.
Implementation Method 1
forming a restriction pattern located in the second region by etching the protective layer using the mask layer as a mask; and forming contact pads located in the first region and connecting wires located in the second region on the conductive layer by etching the conductive layer using the mask layer as a mask
Data Source
AI summary
A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The method for manufacturing a semiconductor structure includes: forming a conductive layer, a protective layer, and a mask layer in sequence on the substrate, the mask layer including a first pattern facing the first region and a second pattern facing the second region; forming a restriction pattern located in the second region by etching the protective layer using the mask layer as a mask; and forming contact pads located in the first region and connecting wires located in the second region on the conductive layer by etching the conductive layer using the mask layer as a mask.