Semiconductor Device Electric Field Control Electrode Design
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Solution Overview
Problem
In semiconductor devices, the overlap of gate and drain electrodes leads to electric field concentration, causing dielectric breakdown when the drain voltage increases, which is a challenge in achieving high withstand voltage.
Innovation Solution
A semiconductor device design where the gate and drain electrodes do not overlap, with an electric-field control electrode placed between them, and insulating layers of varying thicknesses are used to distribute the electric field, ensuring the electric-field control electrode's potential is between the source and gate potentials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the gate electrode and drain electrode overlap with each other to improve device integration, then the device complexity is reduced, but the electric field concentrates in certain portions causing dielectric breakdown
Solution Approach 1:
An electric field control electrode is introduced as an intermediary element between the gate electrode and drain electrode. This intermediate electrode distributes the electric field more evenly, preventing concentration at the overlap region while maintaining the integrated structure. The control electrode acts as a mediator that resolves the conflict between structural integration and electrical reliability.
Solution Approach 2:
The potential of the electric field control electrode is adjusted to be between the gate potential and drain potential, creating a gradient that distributes the electric field. By changing the electrical parameter (potential) of the intermediate electrode, the electric field distribution is optimized to prevent breakdown while maintaining device integration.
2Power
If the drain voltage is increased to improve power handling capability, then the power handling capability is improved, but the electric field concentration causes dielectric breakdown
Solution Approach 1:
The electric field control electrode serves as a mediator that enables higher drain voltages by distributing the electric field. This intermediate structure allows the device to handle higher power levels without suffering from electric field concentration that would cause dielectric breakdown at the gate-drain overlap region.
Solution Approach 2:
The electric field control electrode provides beforehand cushioning by pre-distributing the electric field before it reaches critical levels. This preventive structure cushions against the harmful effects of high voltage stress, allowing higher power operation while preventing dielectric breakdown.
3Reliability
If insulating layers of varying thicknesses are used to distribute the electric field, then the electric field distribution is improved, but the manufacturing precision requirements increase
Solution Approach 1:
Insulating layers are designed with different thicknesses at different locations - thinner near the gate electrode and thicker toward the drain electrode. This local variation in quality (thickness) optimizes electric field distribution, providing better reliability while the gradient design naturally accommodates manufacturing tolerances.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively alleviates electric field concentration, reducing the risk of dielectric breakdown and enhancing the semiconductor device's withstand voltage capability.
Implementation Method 1
an electric-field control electrode is provided between the gate electrode and the drain electrode over a top surface... the insulating layer provided between the electric-field control electrode and the semiconductor layer has a larger thickness than the insulating layer provided between the gate electrode and the semiconductor layer
Data Source
AI summary
An object is to alleviate the concentration of an electric field in a semiconductor device. A gate electrode and a drain electrode are provided not to overlap with each other, and an electric-field control electrode is provided between the gate electrode and the drain electrode over a top surface. Insulating layers are provided between the gate electrode and a semiconductor layer and between the electric-field control electrode and the semiconductor layer, and the insulating layer provided between the electric-field control electrode and the semiconductor layer has a larger thickness than the insulating layer provided between the gate electrode and the semiconductor layer. Further, when the semiconductor device is driven, the potential of the electric-field control electrode may be higher than or equal to a source potential and lower than a gate potential, and for example, connection between the electric-field control electrode and the source potential enables such a structure.