Semiconductor Electrode and Insulator Layout for Electric Field Relaxation
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Solution Overview
Problem
Existing semiconductor devices face challenges in relaxing the electric field, which affects their performance in power conversion and other applications.
Innovation Solution
The semiconductor device incorporates a specific structure with multiple semiconductor regions and insulating parts, including a third electrode region with distinct electrode regions extending in different directions, and insulating regions with varying thicknesses and positions to relax the electric field.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor device structures are used, then the device can be manufactured with standard processes, but the electric field cannot be effectively relaxed
Solution Approach 1:
The gate electrode is divided into multiple gate electrode regions (first, second, third gate electrode regions) with different configurations. Each region has a specific shape and position designed to control the electric field in different areas of the semiconductor device, enabling localized electric field relaxation while maintaining overall device functionality.
Solution Approach 2:
Different gate electrode regions are designed with different local characteristics - the first gate electrode region has a specific width and position, the second region has different dimensions, and the third region has a distinct configuration. This local differentiation allows each region to optimize electric field control in its specific area, achieving comprehensive electric field relaxation throughout the device.
2Productivity
If the semiconductor device structure is optimized for electric field relaxation, then device performance improves, but manufacturing complexity increases
Solution Approach 1:
The insulating film is divided into multiple insulating film regions (first, second, third insulating film regions) corresponding to the different gate electrode regions. Each insulating film region has specific thickness and position characteristics that work with its corresponding gate electrode region to achieve optimized electric field control and power conversion efficiency.
Solution Approach 2:
The gate electrode regions and insulating film regions are designed with asymmetric configurations - different widths, positions, and thicknesses are deliberately created to optimize the electric field distribution. This asymmetric design enables superior power conversion efficiency by precisely controlling charge carrier movement in different device regions.
3Reliability
If standard gate electrode configuration is used, then device structure is simple, but on-resistance is high and current density is low
Solution Approach 1:
The gate electrode is segmented into three distinct regions with different geometries and positions. The first gate electrode region has a specific width and position, the second region has different dimensions, and the third region has a unique configuration. This segmentation allows each region to contribute differently to charge carrier control, achieving lower on-resistance and higher current density through optimized electric field distribution.
Solution Approach 2:
Different gate electrode regions are designed with varying physical parameters including width, position, and shape. These parameter variations are deliberately implemented to optimize the electric field strength and distribution in different device regions, enabling reduced on-resistance and enhanced current density while maintaining manufacturability.
Data Source
AI summary
A semiconductor device includes first to fourth electrodes, first to third semiconductor regions, and first and second insulating parts. The third electrode includes first to third electrode regions. The third electrode region connects the first electrode region and the second electrode region. The first insulating part includes first to third insulating regions. The first insulating region includes first and second insulating portions. The second insulating region includes third and fourth insulating portions. The third insulating region connects the first insulating region and the second insulating region. The third insulating region includes fifth and sixth insulating portions. A lower end of the sixth insulating portion is positioned lower than a lower end of the second insulating portion and a lower end of the fourth insulating portion.