Semiconductor Inspection via Electrical Signal Imaging
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Solution Overview
Problem
The micronization of semiconductor device patterns makes it difficult to obtain optical images with high accuracy, thereby complicating the positional alignment between pattern images and layout images.
Innovation Solution
A semiconductor inspecting method that involves scanning the semiconductor device with light to acquire characteristic information, generating a first pattern image based on this information, and creating a second pattern image from the layout image and current path information, allowing for accurate positional alignment between the two images.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If optical imaging is used to capture reflected light from the semiconductor device, then the inspection process is simple, but the resolution is insufficient due to the full width at half maximum of reflected light being larger than that of incident light
Solution Approach 1:
The patent replaces optical imaging (which relies on reflected light) with electrical signal-based imaging (using current paths). This substitution enables higher resolution because electrical signal characteristics can be measured with greater precision than optical reflected light, directly addressing the resolution limitation without requiring complex optical systems
Solution Approach 2:
The patent changes the measurement parameter from optical reflected light intensity to electrical signal characteristics (current paths). This parameter change enables higher resolution imaging because electrical measurements can detect finer variations than optical methods, resolving the contradiction between measurement precision and method complexity
2Manufacturing precision
If the pattern size is reduced for micronization, then the device functionality is improved, but the ability to obtain high accuracy optical images deteriorates
Solution Approach 1:
The patent substitutes optical measurement with electrical signal measurement to image micronized patterns. Electrical signal-based imaging maintains high accuracy even for sub-micron features because electrical measurements are not limited by the diffraction constraints that affect optical imaging of tiny patterns
Solution Approach 2:
The patent changes from measuring optical reflected light to measuring electrical current paths. This parameter change enables accurate imaging of micronized patterns because electrical signal characteristics remain detectable and distinguishable at much smaller dimensions than optical patterns
3Measurement precision
If positional alignment is performed using optical pattern images, then the process is straightforward, but alignment accuracy deteriorates due to insufficient image resolution
Solution Approach 1:
The patent replaces optical pattern image alignment with electrical signal-based image alignment. The electrical signal images provide sharper, more precise features for alignment because they are not degraded by optical diffraction, thereby improving positional alignment accuracy while maintaining process simplicity through automated comparison of current path images
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables precise positional alignment between pattern and layout images, improving the accuracy of failure analysis and other inspections by utilizing the characteristics of electrical signals and current paths in semiconductor devices.
Implementation Method 1
scanning a semiconductor device with light to acquire characteristic information indicative of characteristics of an electrical signal of the semiconductor device in response to irradiation with the light
Data Source
AI summary
A semiconductor inspecting method according to an embodiment includes a step of scanning a semiconductor device with laser light to acquire characteristic information indicative of characteristics of an electrical signal of the semiconductor device in response to irradiation with the laser light for each of irradiation positions of the laser light and to generate a first pattern image of the semiconductor device based on characteristic information for each of irradiation positions, a step of generating a second pattern image of the semiconductor device based on a layout image of the semiconductor device and current path information indicative of a current path in the semiconductor device, and a step of acquiring matching information indicative of a relative relationship between the first pattern image and the layout image based on a result of positional alignment between the first pattern image and the second pattern image.


