Semiconductor Electrode Protection Against Alkaline Corrosion

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Solution Overview

Problem

The manufacturing process of semiconductor devices faces challenges in maintaining high connecting reliability between electrodes and wirings due to corrosion from strongly alkaline developers, which can damage aluminum electrodes and cause diffusion with gold, degrading the connection reliability.

Innovation Solution

A method involving the formation of a semiconductor device with a titanium-tungsten first metal layer to protect the electrode, followed by a resin protrusion and a second metal layer, where the resin protrusion is formed using a thermosetting resin layer that is developed with an alkaline developer, ensuring the electrode is protected and maintaining connection reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a strongly-alkaline developer is used for developing the resin layer, then the resin protrusion can be formed with good shape control, but the electrode surface is damaged due to corrosion

Engineering Contradiction:
Improveresin protrusion shapeVSAvoidelectrode-wiring connection reliability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

A protective film is introduced as an intermediary layer between the electrode and the alkaline developer. This protective film allows the alkaline developer to effectively develop the resin layer while preventing direct contact between the developer and the electrode, thus avoiding corrosion damage to the electrode surface.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The protective film is formed on the electrode surface before the resin layer is applied and before the developing process begins. This preliminary protective action ensures that when the alkaline developer is later applied, the electrode is already protected from potential corrosion.

Inventive Principle:
Principle #10Preliminary action

2Ease of manufacture

If the electrode is exposed during the developing process, then the resin protrusion can be formed, but aluminum and gold diffusion occurs degrading connection reliability

Engineering Contradiction:
Improveresin protrusion formationVSAvoidelectrode-wiring connection reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The protective film serves as a barrier that prevents direct interaction between the electrode and the alkaline environment during development, thereby preventing aluminum-gold diffusion while still allowing the resin protrusion to be formed through the exposure and development process.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If the electrode surface is damaged, then the manufacturing process can proceed, but connecting reliability between electrode and wiring degrades

Engineering Contradiction:
Improvemanufacturing process continuityVSAvoidelectrode-wiring connection reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The protective film is applied in advance to cushion and protect the electrode surface from damage during the manufacturing process. This prior protection ensures that even when alkaline developers are used, the electrode remains intact and connection reliability is maintained.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively prevents damage to the electrode during the manufacturing process, maintaining high connecting reliability between the electrode and the wiring while providing heat resistance and preventing Al-Au diffusion.

Implementation Method 1

strongly-alkaline developer used in the step of performing the developing treatment has strong corrosivity with respect to aluminum and the like

Methodology Applied
Scientific EffectAlkaline developer corrosion:

Implementation Method 2

the damaged electrode causes diffusion of aluminum and gold, degrading connecting reliability between the electrode and the wiring

Methodology Applied
Scientific EffectDiffusion barrier: Diffusion Barrier

Data Source

PatentUS8008182B2Semiconductor device and method for manufacturing semiconductor device
Publication Date: 2011.08.30 SEIKO EPSON CORP
  • US8008182B2 patent drawing
  • US8008182B2 patent drawing
  • US8008182B2 patent drawing

AI summary

A method for manufacturing a semiconductor device includes: a) preparing a structure including a semiconductor substrate, an electrode provided on a first surface of the semiconductor substrate, and an insulation film provided on the first surface and having an opening positioned on a first part of the electrode; b) forming a first metal layer from an upper surface of the first part of the electrode to an upper surface of the insulation film; c) forming a resin layer on a first part of the first metal layer, which is positioned on the first part of the electrode, and on the insulation film after the step b); d) removing at least a second part of the resin layer, which is positioned on the first part of the first metal layer, in a manner to leave a first part of the resin layer so as to form a resin protrusion; and e) forming a second metal layer, which is electrically connected with the electrode, from an upper surface of the first metal layer to an upper surface of the resin protrusion.