Semiconductor Electrode Asymmetry for Substrate Warping Control
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Solution Overview
Problem
Conventional semiconductor devices experience differences in film stress between electrodes on the front and rear surfaces due to non-uniform electrode shapes, leading to substrate warping, reduced assembly yield, and uneven thermal resistance.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with gate wiring and insulating film on the front surface, and plated electrodes on both surfaces, where the electrode layer on the front surface is separated by the gate wiring, allowing for uniform film stress and improved assembly yield and thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plated electrodes are formed on both sides of the semiconductor substrate by wet plating method, then uniform electrode quality is achieved, but difference in film stress causes substrate warping
Solution Approach 1:
The patent applies asymmetry by making the front surface electrode shape different from the rear surface electrode shape. Specifically, the front surface electrode includes a gate wiring portion that extends in the first direction, while the rear surface electrode has a different configuration. This asymmetric design compensates for the inherent film stress differences between the two surfaces, preventing substrate warping while maintaining uniform electrode quality through wet plating.
2Stability of the object's composition
If electrode shapes on front and rear surfaces are made uniform, then film stress difference is reduced, but assembly yield and thermal resistance uniformity are improved
Solution Approach 1:
The patent applies local quality by creating different electrode shapes at different locations (front surface versus rear surface) to address local stress conditions. The front surface electrode and rear surface electrode are designed with different geometries to compensate for location-specific film stress differences, thereby maintaining overall substrate flatness and improving both assembly yield and thermal resistance uniformity.
3Reliability
If gate wiring divides front surface electrode into comb teeth shape, then uniform operation is realized, but electrode shape difference between surfaces increases
Solution Approach 1:
The patent applies asymmetry by intentionally designing the front surface electrode with a comb teeth shape divided by gate wiring, while the rear surface electrode has a different configuration. This asymmetric design accepts the shape difference between surfaces as a means to compensate for film stress variations, thereby maintaining substrate flatness while still achieving uniform operation through the gate wiring structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design reduces substrate warping and enhances assembly yield and thermal resistance uniformity by aligning electrode shapes and stress, improving the reliability and efficiency of semiconductor devices.
Implementation Method 1
when plated electrodes of the same quality are formed on both sides of the semiconductor substrate by a wet plating method
Data Source
AI summary
A semiconductor substrate (1) has a front surface and a rear surface facing each other. A gate wiring (2) and first and second front surface electrodes (3,4) are provided on the front surface of the semiconductor substrate (1). The first and second front surface electrodes (3,4) are separated from each other by the gate wiring (2). An insulating film (7) covers the gate wiring (2). An electrode layer (8) is provided on the insulating film (7) and the first and second front surface electrodes (3,4) across the gate wiring (2). A rear surface electrode (9) is provided on the rear surface of the semiconductor substrate (1). A first plated electrode (10) is provided on the electrode layer (8). A second plated electrode (11) is provided on the rear surface electrode (9).