Semiconductor Electrode Bonding via Thermal Expansion After CMP
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Solution Overview
Problem
The bonding surfaces of substrates undergo CMP treatment, leading to depressions like recesses, dishing, or erosion in the electrode region, which prevents electrodes from sufficient contact, thereby reducing bondability between electrodes.
Innovation Solution
A semiconductor apparatus with a first interconnect section and a first electrode section having a larger thermal expansion coefficient than the interconnect section, allowing for improved contact and bonding even after CMP treatment, by thermal expansion during subsequent thermal treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If CMP treatment is applied to bonding surfaces to flatten them, then surface flatness is improved, but electrode contact is insufficient due to depression in electrode regions
Solution Approach 1:
The patent changes the physical parameter of the electrode material by selecting materials with high thermal expansion coefficients. During thermal treatment, these materials expand significantly, compensating for the depressions created by CMP treatment and ensuring sufficient contact between bonding surfaces.
Solution Approach 2:
The patent directly applies thermal expansion by performing thermal treatment after CMP processing. The electrode sections with high thermal expansion coefficients expand when heated, filling in the recesses and dishing caused by CMP and restoring proper contact between bonding electrodes.
2Manufacturing precision
If electrode regions are subjected to CMP treatment, then overall surface flatness is achieved, but bondability between electrodes is reduced
Solution Approach 1:
The patent performs preliminary selection of electrode materials with high thermal expansion coefficients before the bonding process. This preliminary action ensures that the electrodes will automatically compensate for CMP-induced depressions during subsequent thermal treatment, maintaining bondability despite CMP processing.
Solution Approach 2:
The patent converts the harmful effect of CMP-induced depressions into a beneficial outcome by using thermal expansion. The same thermal treatment that would normally cause warpage is utilized to expand the electrode material into the depressions, transforming the defect into a self-correcting mechanism that improves bondability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the bondability and bonding strength between the first and second electrode sections, effectively addressing the issue of surface depressions caused by CMP treatment.
Implementation Method 1
The first electrode section has a larger coefficient of thermal expansion than a coefficient of thermal expansion of the first interconnect section. Even in a case where CMP treatment or the like during formation of the first electrode section causes depression such as recesses, dishing, or erosion in a front surface of the first electrode section, subsequent thermal treatment thermally expands the first electrode section more significantly than the first interconnect section.
Data Source
AI summary
A semiconductor apparatus and electronic equipment are provided that allow improvement of bondability between a first electrode section and a second electrode section. A semiconductor apparatus includes a first interconnect section, a first interlayer insulating film covering one surface side of the first interconnect section, a first electrode section in a first through-hole in the first interlayer insulating film and electrically connected to the first interconnect section, a second interconnect section, a second interlayer insulating film covering a surface side of the second interconnect section facing the first interconnect section, and a second electrode section in a second through-hole in the second interlayer insulating film and electrically connected to the second interconnect section. The first electrode section and the second electrode section are directly bonded to each other. The first electrode section has a larger coefficient of thermal expansion than that of the first interconnect section.