Semiconductor Structure Electrode Branches Breakdown Voltage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional methods for increasing breakdown voltage (BVD) in semiconductor structures like LDMOS, EDMOS, and FDMOS often result in increased on-state resistance (Ron), making it difficult to achieve a desired trade-off between BVD and Ron for improved figure of merit.
Innovation Solution
A semiconductor structure design featuring a dielectric layer and electrode structure with electrode branch portions extending into the dielectric structure, where the smallest gap distance between the electrode branch portions and the first interface is significantly larger than 300 Å, allowing for optimized BVD and Ron performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods are used to increase breakdown voltage (BVD), then BVD is improved, but on-state resistance (Ron) is increased
Solution Approach 1:
The electrode structure extends vertically into the dielectric structure, creating a three-dimensional configuration that allows the electrode to interact with multiple interfaces (first and second interfaces) simultaneously. This vertical dimension enables the electrode to modulate electric fields at different depths, achieving both high BVD and low Ron by controlling charge distribution in the vertical direction rather than relying solely on lateral dimensions.
Solution Approach 2:
The dielectric structure is positioned specifically at the first interface (more adjacent to the dielectric layer) to create localized field modulation. This local modification allows the electrode to concentrate its effect where needed - enhancing breakdown voltage at critical interfaces while maintaining low resistance in other regions through the extended electrode geometry.
2Reliability
If conventional methods are used to increase breakdown voltage (BVD), then BVD is improved, but figure of merit (Ron/BVD) deteriorates
Solution Approach 1:
The extended electrode structure utilizes the vertical dimension to achieve dual functionality: enhancing breakdown voltage through interface modulation while simultaneously reducing on-state resistance through extended conductive pathways. This three-dimensional configuration allows independent optimization of both parameters, improving the overall figure of merit (Ron/BVD) compared to conventional two-dimensional structures.
Solution Approach 2:
The electrode structure serves multiple functions simultaneously: it acts as a field modulation element for breakdown voltage enhancement, a conductive pathway for current flow, and an interface control element for optimizing the semiconductor-dielectric interaction. This multi-functionality allows a single structure to address both BVD and Ron optimization, improving the figure of merit.
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, a dielectric layer, a dielectric structure and an electrode structure. The dielectric layer is on an upper substrate surface of the semiconductor substrate. The dielectric structure and the semiconductor substrate have opposing first and second interfaces therebetween. The electrode structure comprises an electrode truck portion and at least one electrode branch portion. The at least one electrode branch portion is extended from the electrode truck portion down into the dielectric structure. The at least one electrode branch portion and the first interface have the smallest gap distance substantially bigger than 300 Å therebetween.