Semiconductor Electrode Layout for Breakdown Voltage and Low Recovery Loss
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Solution Overview
Problem
Semiconductor devices for power control face challenges in increasing breakdown voltage while reducing on-resistance, as existing designs often have a trade-off relationship between these two parameters, and the placement of gate electrodes can affect electric field concentration and parasitic diode recovery loss.
Innovation Solution
The semiconductor device incorporates columnar field plate electrodes arranged periodically, with a gate electrode positioned along the boundary of multiple regions but not at the corners, and includes a Schottky barrier junction at the source contact to enhance carrier concentration and reduce on-resistance, utilizing a specific arrangement of electrodes and semiconductor layers to balance breakdown voltage and on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gate electrode is placed at boundary between regions, then breakdown voltage is improved, but parasitic diode recovery loss increases
Solution Approach 1:
The gate electrode is extracted from the corner position where it would create harmful electric field concentration. By positioning the gate electrode only at the boundary between regions and not at the corners, the patent removes the source of parasitic diode formation while preserving breakdown voltage enhancement through boundary field control.
Solution Approach 2:
The patent applies different electrode configurations to different locations: the gate electrode is present at boundary regions to enhance breakdown voltage but absent at corner regions to prevent parasitic diode formation. This localized differentiation optimizes both breakdown voltage and reduces recovery loss.
2Quantity of substance
If Schottky barrier junction is added at source contact, then carrier concentration is improved, but device complexity increases
Solution Approach 1:
The source contact is designed to form a Schottky barrier junction by merging the source electrode with the second semiconductor layer. This integration achieves carrier concentration enhancement through the Schottky barrier effect while avoiding additional separate structures, thus limiting complexity increase.
3Reliability
If columnar field plate electrodes are arranged periodically, then breakdown voltage is improved, but manufacturing precision requirements increase
Solution Approach 1:
The field plate structure is segmented into columnar electrodes arranged in periodic patterns. This segmentation creates multiple discrete field control points that collectively enhance breakdown voltage while the periodic arrangement provides a regular, repeatable manufacturing pattern that simplifies precision requirements compared to arbitrary positioning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases breakdown voltage and reduces on-resistance while maintaining a balanced performance, utilizing dead space as a Schottky barrier diode to enhance area ratio and reduce parasitic diode recovery loss, offering improved efficiency compared to conventional designs.
Implementation Method 1
A portion of the fourth electrode located at the most distant portion has a Schottky barrier junction with the first semiconductor layer
Implementation Method 2
columnar field plate electrodes (hereinbelow, also called 'FP electrodes') are periodically arranged, and a gate electrode is located between the FP electrodes
Data Source
AI summary
A semiconductor device includes a first electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a second electrode, a third electrode, and a fourth electrode. The third electrode is arranged along a boundary between adjacent regions of the plurality of regions. The third electrode is not located at a portion of the boundary most distant to the second electrode. The third electrode faces the second semiconductor layer via an insulating body. The fourth electrode is located on the third semiconductor layer. The fourth electrode is connected to the second semiconductor layer, the third semiconductor layer, and the second electrode. A portion of the fourth electrode located at the most distant portion has a Schottky barrier junction with the first semiconductor layer.