Semiconductor Electrode Layout for Breakdown Voltage and On-Resistance
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high breakdown voltage and low on-resistance, with existing designs often compromising on one aspect to improve the other.
Innovation Solution
The semiconductor device incorporates a specific configuration with a first conductive member and insulating member arrangement, including a first electrode, a second electrode, a third electrode, and semiconductor regions of different conductivity types, where the ratio of certain dimensions and impurity concentrations are optimized to control electric field distribution and enhance breakdown voltage while maintaining low on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the breakdown voltage is increased, then the on-resistance increases
Solution Approach 1:
The patent applies local quality by creating different impurity concentration zones within the semiconductor structure. Specifically, it forms a first doped region with a first impurity concentration and a second doped region with a second impurity concentration, where the impurity concentrations differ between regions. This allows different parts of the device to have optimized properties: regions with higher impurity concentration reduce on-resistance, while regions with lower impurity concentration maintain high breakdown voltage, thereby resolving the contradiction between these two parameters.
Solution Approach 2:
The patent employs parameter changes by systematically varying the impurity concentration across different regions of the semiconductor device. The first doped region has a first impurity concentration optimized for low on-resistance, while the second doped region has a second impurity concentration optimized for high breakdown voltage. By changing the impurity concentration parameter spatially, the device achieves both low on-resistance and high breakdown voltage simultaneously, resolving the technical contradiction.
2Loss of energy
If the impurity concentration is increased to reduce on-resistance, then the breakdown voltage decreases
Solution Approach 1:
The patent applies segmentation by dividing the semiconductor structure into multiple doped regions with different impurity concentrations. Instead of using a uniform impurity concentration throughout, it creates a first doped region with a first impurity concentration and a second doped region with a second impurity concentration. This segmentation allows each region to be optimized for its specific function, resolving the contradiction between on-resistance and breakdown voltage.
Solution Approach 2:
The patent implements local quality by assigning different impurity concentrations to different spatial regions. The first doped region has higher impurity concentration to reduce on-resistance, while the second doped region has lower impurity concentration to maintain high breakdown voltage. This local differentiation of material properties resolves the contradiction by allowing each region to optimize for its primary function.
3Device complexity
If a simple electrode configuration is used, then the device complexity is reduced, but the ability to control electric field distribution is limited
Solution Approach 1:
The patent applies dimensionality change by introducing a vertical dimension to the electrode configuration. It includes a first electrode, a second electrode, and a third electrode arranged at different vertical positions, with the third electrode extending in a direction crossing the first direction. This three-dimensional electrode arrangement enables sophisticated electric field control without requiring overly complex planar configurations, resolving the contradiction between device complexity and electric field control capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively achieves a high breakdown voltage and low on-resistance, stabilizing these characteristics by controlling the electric field and impurity concentrations, thereby improving the overall performance of the semiconductor device.
Implementation Method 1
the ratio of certain dimensions and impurity concentrations are optimized to control electric field distribution and enhance breakdown voltage while maintaining low on-resistance
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a conductive member, and an insulating member. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The second semiconductor region is between the first partial region and the third semiconductor region. The conductive member is located between the second partial region and the third electrode. The conductive member includes a first end portion and a first other-end portion. The first end portion is between the first other-end portion and the third electrode. The conductive member includes first to third portions. The second portion is between the third portion and the third electrode. The first portion is between the second portion and the third electrode. The first portion includes the first end portion. The second portion contacts the first and third portions.