Semiconductor Electrode Acute-Angled Concavo-Convex Groove

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Solution Overview

Problem

In semiconductor devices with a three-dimensional structure, thermal treatment after bonding can lead to a decrease in bonding strength due to stress from expanded copper, resulting in poor electrical connections or peeling.

Innovation Solution

The formation of acute-angled concavo-convex portions or enlarged surface areas on the electrodes' bonding surfaces, along with metal seed formation and plating growth, creates spaces for expanded copper to enter, relieving stress and enhancing bonding strength.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If thermal treatment is performed after bonding two substrates, then bonding strength is improved, but copper expansion causes stress leading to decreased bonding strength and peeling

Engineering Contradiction:
Improvebonding strengthVSAvoidcopper expansion stress
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent forms acute-angled concavo-convex portions on the bonding surfaces before bonding occurs. These pre-formed structures create spaces that accommodate copper expansion during subsequent thermal treatment, preventing stress buildup that would otherwise cause peeling or bonding failure.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent converts the harmful copper expansion stress into a beneficial effect by designing concavo-convex portions that guide the expanded copper into specific spaces. The expansion that would normally cause damage is instead utilized to fill predetermined regions, relieving stress and maintaining bonding integrity.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Manufacturing precision

If copper is embedded without gaps in concave portions, then manufacturing precision is improved, but pumping phenomenon occurs during thermal treatment causing bonding failure

Engineering Contradiction:
Improvecopper embedding precisionVSAvoidbonding strength
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies different surface characteristics to different regions: the bonding surfaces have acute-angled concavo-convex portions for stress relief, while the concave portions for copper embedding maintain precise fit. This localized differentiation allows copper to be precisely embedded where needed while creating expansion spaces where required.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The bonding surface is segmented into multiple concavo-convex portions, creating discrete spaces distributed across the surface. This segmentation allows copper expansion to occur in localized regions rather than uniformly, preventing the pumping phenomenon while maintaining overall bonding integrity.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively suppresses bonding strength decreases and prevents poor electrical connections or peeling by allowing copper to expand into formed spaces, thereby maintaining strong substrate bonding.

Implementation Method 1

forming the metal in the groove in which the metal seed is formed, by metal plating growth

Methodology Applied
Scientific EffectMetal plating growth: Electrodeposition

Implementation Method 2

When thermal treatment is performed on the first substrate and the second substrate, the expanded metal enters a space which is formed by insufficient metal plating

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS11018110B2Semiconductor device, manufacturing method, and solid-state imaging device
Publication Date: 2021.05.25 SONY SEMICON SOLUTIONS CORP
  • US11018110B2 patent drawing
  • US11018110B2 patent drawing
  • US11018110B2 patent drawing

AI summary

The present technology relates to a semiconductor device, a manufacturing method, and a solid-state imaging device which are capable of suppressing a decrease in bonding strength and preventing a poor electrical connection or peeling when two substrates are bonded to each other. Provided is a semiconductor device, including: a first substrate including a first electrode including a metal; and a second substrate bonded to the first substrate and including a second electrode including a metal. An acute-angled concavo-convex portion is formed on a side surface of a groove in which the first electrode is formed and a side surface of a groove in which the second electrode metal-bonded to the first electrode is formed. The present technology can be, for example, applied to a solid-state imaging device such as a CMOS image sensor.