Semiconductor Electrode Connection Layout for Heat Dissipation
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Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving large connection areas between electrodes and connecting portions due to precision limitations, leading to difficulties in heat dissipation and electrical connectivity, especially when using laser vias in build-up substrates.
Innovation Solution
The semiconductor device incorporates a semiconductor element with a first electrode and connecting portions that occupy 45% or more of the exposed area, featuring parallel or substantially parallel straight peripheries and short distances between the connecting portions and electrode ends, embedded within an insulator with a projecting portion in the holding layer for enhanced heat dissipation and connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If laser vias are used in build-up substrates to connect electrodes, then manufacturing precision is improved, but connection area is reduced due to precision limitations
Solution Approach 1:
The patent transitions from point-like laser via connections to planar connecting portions with straight peripheries, expanding the connection from a vertical dimension (via hole) to a horizontal dimension (connecting portion area). This dimensional change allows for larger connection areas while maintaining the precision benefits of laser processing.
Solution Approach 2:
The connecting portions are divided into multiple regions with straight peripheries that can be independently formed and controlled. This segmentation allows for optimized connection geometry where each portion can be precisely positioned and sized to maximize connection area while maintaining manufacturing precision.
2Temperature
If connection area between electrode and connecting portion is increased, then heat dissipation is improved, but manufacturing complexity increases
Solution Approach 1:
The patent specifies that the connecting portion occupies 45% or more of the exposed area of the electrode, establishing a quantitative parameter that ensures adequate heat dissipation. This parameter-based approach simplifies manufacturing by providing clear design criteria rather than requiring complex geometric optimizations.
Solution Approach 2:
The connecting portions are positioned to make direct contact with the electrode ends, concentrating the heat dissipation function at the critical interface between electrode and connecting portion. This local quality approach ensures efficient heat transfer where it is most needed without requiring complex structures throughout the entire device.
3Reliability
If connection area is increased to reduce resistance, then electrical connectivity is improved, but precision requirements become more stringent
Solution Approach 1:
The connecting portions are designed with straight peripheries that align with the electrode ends, creating a geometric match that tolerates manufacturing variations. The straight-edged geometry provides robust alignment that is less sensitive to precision errors compared to curved or irregular shapes.
Solution Approach 2:
The connecting portion is designed to occupy 45% or more of the electrode exposed area, providing excessive connection area that ensures adequate electrical connectivity even when alignment is not perfect. This excessive action provides a margin of safety against precision limitations.
Data Source
AI summary
Provided is a semiconductor device including: a first wiring layer; a holding layer; a semiconductor element that is disposed between the first wiring layer and the holding layer and includes at least a semiconductor layer and a first electrode disposed on a first surface of the semiconductor layer; an insulator in which at least a part of the semiconductor element is embedded; and a first connecting portion that electrically connects the first wiring layer and the first electrode, wherein a connection area between the first connecting portion and the first electrode occupies 45% or more of an area of an exposed part of the first electrode.