Semiconductor Light-Emitting Electrode Layout for Current Spreading
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Solution Overview
Problem
Conventional semiconductor light-emitting devices face issues with light emission efficiency due to enlarged contact areas blocking light and structural weaknesses in the connection structure, particularly during wire bonding, where voids in the metallic material can lead to electrode instability and damage.
Innovation Solution
The semiconductor light-emitting device features a substrate with a connection structure including an insulating layer and electrically connecting layers, where the second electrode's projection covers a portion of the insulating layer, providing support and reducing the likelihood of damage during wire bonding by distributing the force exerted by the wire bonding electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the contact area between the electrodes and the semiconductor light-emitting unit is enlarged to achieve good current spreading effect, then the current spreading effect is improved, but the effective area of the light-emitting surface is reduced because the light is partially blocked by the electrodes
Solution Approach 1:
The patent transitions from a planar contact arrangement to a three-dimensional structure by forming recesses that extend through the semiconductor light-emitting unit. The electrodes are positioned within these recesses, allowing current spreading to occur in the vertical dimension while keeping the horizontal light-emitting surface area maximized. This dimensional change resolves the contradiction by enabling both good current spreading and large light-emitting surface area simultaneously.
2Reliability
If a through hole is formed in the insulating layer to electrically connect the second electrode to the second type semiconductor layer, then the electrical connection is achieved, but the structural strength is reduced due to void formation in the metallic material during wire bonding
Solution Approach 1:
The patent divides the single through hole into multiple smaller through holes arranged in an array. This segmentation prevents void formation during metal filling because the smaller holes allow more uniform material distribution and reduce trapping of air bubbles. The multiple small holes collectively provide the same electrical connection function while significantly improving structural strength and reliability during wire bonding operations.
Solution Approach 2:
The patent applies different structural characteristics to different regions: the insulating layer contains multiple small through holes in regions requiring electrical connection, while maintaining solid continuous structure in regions requiring mechanical strength. The electrodes are strategically positioned to leverage both the electrical connectivity of the through holes and the structural support of the surrounding solid material, optimizing both electrical and mechanical performance locally.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the structural integrity and light-emitting efficiency by minimizing electrode damage and void formation in the connecting layer, allowing for stable operation and improved current spreading without obstructing the light-emitting surface.
Implementation Method 1
the second electrode's projection covers a portion of the insulating layer, providing support and reducing the likelihood of damage during wire bonding by distributing the force exerted by the wire bonding electrode
Implementation Method 2
electrons from the n-type semiconductor layer and holes from the p-type semiconductor layer undergo radiative recombination in the active layer to emit light
Data Source
AI summary
A semiconductor light-emitting device includes a substrate, a connection structure disposed on the substrate, a semiconductor light-emitting unit disposed on the connection structure, and first and second electrodes. The connection structure includes an insulating layer formed with a through hole, a first electrically connecting layer disposed on the insulating layer and electrically connected to the first electrode, and a second electrically connecting layer disposed between the substrate and the insulating layer and extending through the through hole to be electrically connected to the second electrode. A projection of the second electrode on the insulating layer covers a portion of the insulating layer.